Product Information

BSH105.215

BSH105.215 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 20V; 0.67A; 417mW; SOT23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3478 ea
Line Total: USD 1.74

470 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
305 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5

Stock Image

BSH105.215
Nexperia

5 : USD 0.3224
25 : USD 0.2262
100 : USD 0.1625
275 : USD 0.1534

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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BSH105.215 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. It is a small footprint part specifically designed to reduce the power consumption of portable consumer electronics. It is rated for a drain-source voltage of up to 90V, a maximum drain current of 10A, an on-resistance of 2.4 Ohms, and a maximum gate-source voltage of 8V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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