Product Information

BSH203.215

BSH203.215 electronic component of Nexperia

Datasheet
Transistor: P-MOSFET; unipolar; -30V; -0.3A; 170mW; SOT23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.247 ea
Line Total: USD 1.23

3768 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3666 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 5

Stock Image

BSH203.215
Nexperia

5 : USD 0.2288
25 : USD 0.2067
100 : USD 0.1664
270 : USD 0.1573
3000 : USD 0.1534

     
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Package
Case
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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BSH203.215 is a N-channel enhancement mode Field Effect Transistor (FET) manufactured by Nexperia, a major semiconductor company. It is designed for use in DC/DC converters, motor drives, and high current switching and power management applications. This FET has a drain-source voltage rating of 200V and a drain-source current rating of 6.8A. It also features a low gate threshold voltage to enable easy switching in low-voltage environments. Finally, this FET is optimized for low-drain induced discharge and is suitable for use in high power/high current applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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