Product Information

BSS138PW.115

BSS138PW.115 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SOT323
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.1352 ea
Line Total: USD 1.35

58689 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 10  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
24520 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 10
Multiples : 5

Stock Image

BSS138PW.115
Nexperia

10 : USD 0.1222
100 : USD 0.0637
355 : USD 0.0455
970 : USD 0.0429

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

BSS138PW.115 is a through-hole silicon N-channel depletion-type metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Nexperia. It is typically used as a general-use low current switch or amplifier. The device consists of two gates, a source, and a drain that are used to control the flow of current when a voltage is applied. The body of the device is made from an isolated silicon substrate to allow for increased current density with less power dissipation. It has an insulated-gate for greater control and can handle peak currents of up to 200 mA. It is rated for an operating voltage of up to 30V and a maximum operating temperature of 150 degrees Celsius.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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