Product Information

BUK7628-100A.118

BUK7628-100A.118 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.4556 ea
Line Total: USD 3.46

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 800
1 : USD 3.4556
2 : USD 2.1552
13 : USD 2.0536

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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The BUK7628-100A.118 is part of the Nexperia P-Channel MOSFET series. It is a low on-state resistance P-channel enhancement mode field-effect transistor. The device is designed for application in low voltage (up to 100 V), high speed power switching circuits. It has a maximum drain source voltage of 100 V and a maximum gate source voltage of ±20 V. It has an on-state resistance of 6.2 mO and a drain current of -19 A. It is capable of sustaining avalanche energy specified up to a maximum of 35 mJ.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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