BUK762R6-40E,118

BUK762R6-40E N-channel TrenchMOS standard level FET 28 July 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1V at 175 C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 263 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.2 2.6 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 35 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK762R6-40E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK762R6-40E D2PAK plastic single-ended surface-mounted package SOT404 (D2PAK) 3 leads (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK762R6-40E BUK762R6-40E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 263 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 100 A D GS mb V = 10 V T = 100 C Fig. 2 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 920 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK762R6-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 July 2016 2 / 13