Product Information

BUK7635-55A,118

BUK7635-55A,118 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 800
Multiples : 800
800 : USD 0.5462
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.1912
10 : USD 1.0507
100 : USD 0.8304
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 1.8463
10 : USD 1.3583
100 : USD 1.0341
500 : USD 0.9097
800 : USD 0.737
2400 : USD 0.7099
4800 : USD 0.7029
N/A

Obsolete
0 - WHS 4

MOQ : 12
Multiples : 1
12 : USD 0.6079
25 : USD 0.5828
50 : USD 0.4341
100 : USD 0.4254
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --55 V DS j j I drain current V =10V T =25C --35 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --85 W tot mb dissipation Static characteristics R drain-source on-state V =10V I =20A T =25C - 3035m DSon GS D j resistance see Figure 11 see Figure 12 Avalanche ruggedness E non-repetitive I =14A V 55 V --49 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init)BUK7635-55A Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7635-55A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -20 20 V GS I drain current T =25C V =10 V see Figure 1 -35 A D mb GS see Figure 3 T = 100 C V = 10 V see Figure 1 -25 A mb GS I peak drain current T = 25 C pulsed t 10 s - 139 A DM mb p see Figure 3 P total power dissipation T =25C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 35 A S mb I peak source current pulsed t 10 s T = 25 C - 139 A SM p mb Avalanche ruggedness E non-repetitive drain-source I =14A V 55 V R =50 -49 mJ DS(AL)S D sup GS avalanche energy V =10 V T = 25 C unclamped GS j(init) BUK7635-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 27 January 2011 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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