Product Information

BGU8007,115

BGU8007,115 electronic component of NXP

Datasheet
RF Amplifier Low Noise Amplifier

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.9543
N/A

Obsolete
0 - WHS 2

MOQ : 32
Multiples : 32
32 : USD 0.8186
100 : USD 0.4526
250 : USD 0.4079
500 : USD 0.373
1500 : USD 0.3283
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 1.4742
10 : USD 0.6668
100 : USD 0.4471
500 : USD 0.3694
1000 : USD 0.3229
5000 : USD 0.3089
10000 : USD 0.3089
25000 : USD 0.3056
50000 : USD 0.297
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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BGU8007 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 2 30 March 2012 Product data sheet 1. Product profile 1.1 General description The BGU8007 is a Low Noise Amplifier (LNA) for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU8007 requires only one external matching inductor and one external decoupling capacitor. The BGU8007 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels it delivers 19 dB gain at a noise figure of 0.75 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Covers full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.75 dB Excellent low NF < 1 dB in the presence of strong jamming signals Gain 19 dB High input 1 dB compression point P of 11 dBm i(1dB) High out of band IP3 of 4 dBm i Supply voltage 1.5 V to 2.5 V Power-down mode current consumption < 1 A Optimized performance at low supply current of 4.6 mA Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Small 6-pin leadless package 1 mm 1.45 mm 0.5 mm 110 GHz transit frequency - SiGe:C technologyBGU8007 NXP Semiconductors SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass 1.3 Applications LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature phones, tablet PCs, Personal Navigation Devices, Digital Still Cameras, Digital Video Cameras, RF Front End modules, complete GPS chipset modules and theft protection (laptop, ATM) 1.4 Quick reference data Table 1. Quick reference data f = 1559 MHz to 1610 MHz V = 1.8 V P < 40 dBm T =25 C input matched to 50 using CC i amb a 5.6 nH inductor unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V supply voltage RF input AC coupled 1.5 - 2.5 V CC I supply current V 0.8 V CC ENABLE P < 40 dBm 3.3 4.6 5.9 mA i P = 20 dBm 8.4 11.9 14.7 mA i G power gain P < 40 dBm, no jammer 17.0 19.0 20.5 dB p i P = 20 dBm, no jammer 18.5 20.5 21.5 dB i 1 NF noise figure P < 40 dBm, no jammer - 0.75 1.1 dB i 2 P < 40 dBm, no jammer - 0.80 1.2 dB i 2 P = 20 dBm, no jammer -1.01.4dB i P input power at 1 dB f = 1559 MHz to 1610 MHz i(1dB) gain compression V =1.5 V 15 12 - dBm CC V =1.8 V 14 11 - dBm CC V =2.2 V 13 10 - dBm CC IP3 input third-order intercept point f = 1.575 GHz i 3 V =1.5 V 14 - dBm CC 3 V =1.8 V 14 - dBm CC 3 V =2.2 V 25 - dBm CC 1 PCB losses are subtracted. 2 Including PCB losses. 3 f = 1713 MHz f = 1851 MHz P =P = 30 dBm. 1 2 1 2 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1GND 6 5 4 4 5 2GND 3RF IN 3 6 4V CC 21 5 ENABLE sym129 1 2 3 6RF OUT Transparent top view BGU8007 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 30 March 2012 2 of 19

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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