Product Information

MAAP-010168-000000

MAAP-010168-000000 electronic component of MACOM

Datasheet
RF Amplifier 500-3000MHz 50 ohm Gain 24dB 12 Watt

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1425.5923 ea
Line Total: USD 1425.59

4 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1324.3089
10 : USD 1313.9507
25 : USD 1313.8914
50 : USD 1313.8558
100 : USD 1313.8321
250 : USD 1313.8083
500 : USD 1313.7846
1000 : USD 1313.4761
2500 : USD 1313.2151

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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MAAP-010168 10 W Power Amplifier Rev. V4 0.5 - 3 GHz Features Functional Schematic Saturated Output Power: 41 dBm Linear Gain: 24 dB Power Added Efficiency: 30% at P SAT 50 Input / Output Match Ceramic Flange Mount Package RoHS* Compliant and 260C Re-flow Compatible Description The MAAP-010168 is a two stage MMIC power amplifier designed for broadband high power applications. It can be used as either a driver or an output stage amplifier. This device is fully matched input and output to 50 which eliminates any sensitive external RF tuning components. 2 Pin Configuration The device is packaged in a lead free 10-lead Pin Function flanged hermetic package for high volume manufacturing. 1 V 2 GG 2 V 1 GG The MAAP-010168 is fabricated using a fully 3 passivated high reliability pHEMT process. The 3 RF Input device provides excellent power added efficiency 4 V 1 GG and gain. 5 V 2 GG 6 V 1 DD 1 Ordering Information 7 V 2 DD 3 Part Number Package 8 RF Output MAAP-010168-000000 Bulk 9 V 2 DD 10 V 1 MAAP-010168-001SMB Sample Board DD 2. Flange is DC and RF ground. 1. Reference Application Note M567 for package handling and 3. RF Input & RF Output ports have shunt DC paths to ground. mounting procedure. No External DC voltage should be applied to the RF ports. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-010168 10 W Power Amplifier Rev. V4 0.5 - 3 GHz Electrical Specifications: Freq. = 0.5 - 3.0 GHz, V = 10 V, I = 3.5 A, T = 25C, Z = 50 DD DQ A 0 Parameter Test Conditions Units Min. Typ. Max. Gain Small signal dB 19 24 Input Return Loss dB 10 Output Return Loss dB 10 P1dB dBm 39 P dBm 38 41 SAT I 3.5 DQ Current A P 5.5 SAT PAE P % 30 SAT Gate Bias V -0.7 Duty Cycle % 100 4,5 Absolute Maximum Ratings Operating the MAAP-010168 The MAAP-010168 is static sensitive. Please handle Parameter Absolute Maximum with care. To operate the device, follow these steps. Input Power 24 dBm Ramp down or shutdown in reverse order (gate bias on first and off last). All V pins should GG Operating Supply Voltage +11 V have the same voltage applied at all times. Operating Gate Voltage -2 V 1. Apply V (-1.5 V). GG 2. Apply V (10.0 V Typical). DD Operating Temperature -40C to +85C 3. Set I by adjusting V . DQ GG 6,7 4. Apply RF . Channel Temperature +150C IN Storage Temperature -65C to +150C 4. Exceeding any one or combination of these limits may cause Handling Procedures permanent damage to this device. 5. MACOM does not recommend sustained operation near these Please observe the following precautions to avoid survivability limits. damage: 6. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 7. Junction Temperature (T ) = T + * ((V * I) - (P - P )) J C JC OUT IN Static Sensitivity Typical thermal resistance ( ) = 2.0C/W JC Gallium Arsenide Integrated Circuits are sensitive to a) For T = 25C 1.5 GHz C electrostatic discharge (ESD) and can be damaged T = +80C +10 V, 4 A, P = 41 dBm, P = 21 dBm J OUT IN by static electricity. Proper ESD control techniques b) For T = 85C 1.5 GHz C should be used when handling these devices. T = +138C +10 V, 3.9 A, P = 41 dBm, P = 21 dBm J OUT IN 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
MACOM
Nitronex

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