Product Information

BGA2800,115

BGA2800,115 electronic component of NXP

Datasheet
NXP Semiconductors RF Amplifier 6CH MMIC Amp 3.7 dB 3.3V 10.5mA 3.2GHz

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1852 ea
Line Total: USD 0.19

11578 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11569 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.1852
10 : USD 0.1449
100 : USD 0.1012
1000 : USD 0.0874
3000 : USD 0.0816
9000 : USD 0.0805
24000 : USD 0.077
99000 : USD 0.0759

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Factory Pack Quantity :
Bandwidth
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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BGA2800 MMIC wideband amplifier Rev. 5 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz Output power at 1 dB gain compression = 1 dBm Supply current = 10.5 mA at a supply voltage of 3.3 V Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Noise figure = 4 dB at 950 MHz Unconditionally stable (K > 1) 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 2, 5 GND2 3RF OUT 4 GND1 6RF IN P V BGA2800 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2800 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2800 *E7 * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +5.0 V CC I supply current - 55 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 3.3 V Z = Z = 50 P = 40 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 3.0 3.3 3.6 V CC I supply current 8.8 10.5 12.1 mA CC BGA2800 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 5 13 July 2015 2 of 18

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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