Product Information

BGA2850,115

BGA2850,115 electronic component of NXP

Datasheet
RF Amp Chip Single GP 2.2GHz 5.5V 6-Pin TSSOP T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 2.9134 ea
Line Total: USD 1456.7

0 - Global Stock
MOQ: 500  Multiples: 500
Pack Size: 500

Read More Specifications

     
Manufacturer
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Operating Frequency
Operating Supply Voltage
Pd - Power Dissipation
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Operating Supply Voltage Min
Operating Supply Voltage Max
Rad Hardened
Number Of Channels
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Additional Infomation About Product

BGA2850 MMIC wideband amplifier Rev. 3 26 August 2013 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 24 dB at 950 MHz Output power at 1 dB gain compression = 1 dBm Supply current = 9.1 mA at a supply voltage of 5 V Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Noise figure = 4.1 dB at 950 MHz Unconditionally stable (K > 1) 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 1 6 5 4 2, 5 GND2 3RF OUT 6 3 4 GND1 4 2, 5 132 6RF IN sym052BGA2850 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2850 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2850 *EB * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +7.0 V CC I supply current - 36 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - 26 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 5.0 V Z = Z = 50 P = 39 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 4.5 5.0 5.5 V CC I supply current 7.3 9.1 10.8 mA CC BGA2850 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 26 August 2013 2 of 18

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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