Product Information

BFU710F,115

BFU710F,115 electronic component of NXP

Datasheet
Transistors RF Bipolar NPN WIDEBAND SILICON GERMANIUM RF TRANS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3887 ea
Line Total: USD 0.39

2588 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2584 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.3323
100 : USD 0.2703
500 : USD 0.2381
1000 : USD 0.2173
3000 : USD 0.1932

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Type
Brand
Factory Pack Quantity :
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Additional Infomation About Product

BFU710F NPN wideband silicon germanium RF transistor Rev. 1 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 1.45 dB at 12 GHz High maximum power gain 14 dB at 12 GHz 110 GHz f silicon germanium technology T 1.3 Applications 2nd LNA stage and mixer stage in DBS LNBs Low noise amplifiers for microwave communications systems Ka band oscillators DROs Low current battery equipped applications Microwave driver / buffer applications GPS RKE AMR ZigBee FM radio Mobile TV BluetoothBFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 2 10 mA C 1 P total power dissipation T 90 C - - 136 mW tot sp h DC current gain I =1mA V =2V 200 375 550 FE C CE T =25 C j C collector-base V =2V f=1MHz - 21 - fF CBS CB capacitance f transition frequency I =9mA V =2V -43 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =9mA V =2V -14 - dB p(max) C CE f = 12 GHz T =25 C amb NF noise figure I =2mA V =2V -1.45 - dB C CE f = 12 GHz = S opt P output power at 1 dB I =5mA V =2.5 V -4.5 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 5.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU710F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU710F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 20 April 2011 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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