Product Information

BFU910FX

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NXP Semiconductors RF Bipolar Transistors NPN wideband silicon germanium RF trans

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 BFU910FX NXP	1 : USD 0.6817 10 : USD 0.667 30 : USD 0.6549 100 : USD 0.6452	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 BFU910FX NXP	1 : USD 0.7109 10 : USD 0.5727 100 : USD 0.1257 1000 : USD 0.1038 3000 : USD 0.0914 9000 : USD 0.0869 24000 : USD 0.0835 45000 : USD 0.0823 99000 : USD 0.079	N/A Obsolete

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Additional Infomation About Product

BFU910F NPN wideband silicon germanium RF transistor Rev. 2 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits Low noise high gain microwave transistor Minimum noise figure (NF ) = 0.65 dB at 12 GHz min Maximum stable gain 14.2 dB at 12 GHz 90 GHz f SiGe technology T 1.3 Applications K band DBS Low-Noise blocks u 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage R 1 M -2.0 3.0 V CE BE I collector current - 10 15 mA C 1 P total power dissipation T 90 C -- 300mW tot sp h DC current gain I =6 mA V = 2 V - 1900 - FE C CE C collector-base capacitance V =2V f = 1MHz - 35 - fF CBS CB f transition frequency I =6 mA V =2V - 90 - GHz T C CE MSG maximum stable gain I =6 mA V =2V -14.2- dB C CE f=12 GHz NF minimum noise figure I =6 mA V =2V -0.65- dB min C CE f = 12 GHz = S opt G associated gain I =6 mA V =2V -13.0- dB ass C CE f = 12 GHz = S opt P output power at 1 dB I =10 mA V =2V -2 - dBm L(1dB) C CE gain compression f = 12 GHz Z =Z =50 S L 1 T is the temperature at the solder point of the emitter lead. spBFU910F NXP Semiconductors NPN wideband silicon germanium RF transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 2base 3emitter 4 collector E PE 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU910F - plastic surface-mounted flat pack package reverse pinning SOT343F 4 leads 4. Marking Table 4. Marking Type number Marking Description BFU910F F1* * = t : made in Malaysia * = w : made in China 5. Design support Table 5. Available design support Download from the BFU910F product information page on

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
Technology Si Si
Packaging Reel Reel
Brand Nxp Semiconductors Nxp Semiconductors
Factory Pack Quantity : 3000 3000
Cnhts 8541210000 8541210000
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000