Product Information

BF992,215

BF992,215 electronic component of NXP

Datasheet
Transistors RF MOSFET N-CH DUAL GATE 20V VHF
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.2556
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.4773
10 : USD 0.7225
25 : USD 0.5696
100 : USD 0.499
250 : USD 0.4373
500 : USD 0.3867
1000 : USD 0.3087
3000 : USD 0.286
6000 : USD 0.2721
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BF992 Silicon N-channel dual gate MOS-FET Rev. 04 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication Silicon N-channel dual gate MOS-FET BF992 APPLICATIONS PINNING VHF applications such as VHF television tuners and FM PIN SYMBOL DESCRIPTION tuners with 12 V supply voltage. The device is also 1 s, b source suitable for use in professional communications 2 d drain equipment. 3g gate 2 2 4g gate 1 DESCRIPTION 1 Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and handbook, halfpage d substrate interconnected. 43 The transistor is protected against excessive input voltage g 2 surges by integrated back-to-back diodes between gates g and source. 1 CAUTION 1 2 The device is supplied in an antistatic package. s,b The gate-source input must be protected against static Top view MAM039 discharge during transport or handling. Marking code: %MB. Fig.1 Simplified outline (SOT143B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage (DC) - 20 V DS I drain current (DC) - 40 mA D P total power dissipation T =60C - 200 mW tot amb Y forward transfer admittance f = 1 kHz I = 15 mA V =10V 25 - mS fs D DS V =4V G2-S C input capacitance at gate 1 f = 1 MHz I = 15 mA V =10V 4 - pF ig1-s D DS V =4V G2-S C reverse transfer capacitance f = 1 MHz I = 15 mA V =10V 30 - fF rs D DS V =4V G2-S F noise gure G = 2 mS I = 15 mA V =10V 1.2 - dB S D DS V = 4 V f = 200 MHz G2-S T operating junction temperature - 150 C j Rev. 04 - 21 November 2007 2 of 9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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