Product Information

A2I35H060NR1

A2I35H060NR1 electronic component of NXP

Datasheet
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3400-3800 MHz, 10 W Avg., 28 V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 56.2243 ea
Line Total: USD 28112.15

0 - Global Stock
MOQ: 500  Multiples: 500
Pack Size: 500

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0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 500
Multiples : 500
500 : USD 37.7067

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RoHS - XON
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Moisture Sensitive
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Additional Infomation About Product

DocumentNumber:A2I35H060N FreescaleSemiconductor Rev. 0, 4/2016 TechnicalData RFLDMOSWidebandIntegrated A2I35H060NR1 PowerAmplifiers A2I35H060GNR1 The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800MHz. Thismulti--stagestructureisratedfor26to32Voperationandcoversall typicalcellular basestationmodulationformats. 34003800MHz,10WAVG.,28V AIRFASTRFLDMOSWIDEBAND 3500MHz INTEGRATEDPOWERAMPLIFIERS Typical Doherty Single--Carrier W--CDMA Characterization Performance: V =28Vdc,I =56mA,I = 141 mA, V =1.6Vdc, DD DQ1A DQ2A GS1B V =1.3Vdc,P = 10 W Avg., Input Signal PAR = 9.9 dB 0.01% GS2B out (1) Probability on CCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) TO--270WB--17 3400MHz 24.0 32.5 33.4 PLASTIC A2I35H060NR1 3500MHz 24.0 32.4 37.0 3600MHz 23.7 31.3 39.0 Features AdvancedHighPerformanceIn--PackageDoherty TO--270WBG--17 PLASTIC On--ChipMatching(50Ohm Input, DC Blocked) A2I35H060GNR1 IntegratedQuiescent Current TemperatureCompensationwith (2) Enable/DisableFunction Designedfor DigitalPredistortionError CorrectionSystems 1. Alldatameasuredinfixturewithdevicesolderedtoheatsink. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily,andtoAN1987,QuiescentCurrentControl for the RF Integrated Circuit Device Family. GotoV DS1A VBW Carrier A 17 (2) V 1 VBW DS1A A V 2 GS2A RF RF /V inA out1 DS2A 3 16 V GS1A RF /V out1 DS2A RF 4 inA N.C. 5 GND 6 V GS1A QuiescentCurrent 15 GND GND 7 (1) V TemperatureCompensation GS2A 8 N.C. RF 9 14 inB V GS1B RF /V QuiescentCurrent V 10 out2 DS2B GS1B (1) V TemperatureCompensation GS2B V 11 GS2B 13 (2) V 12 VBW DS1B B Peaking RF (TopView) inB RF /V out2 DS2B Note: Exposed backside of the package is V VBW thesourceterminalforthetransistors. DS1B B Figure1.FunctionalBlockDiagram Figure2.PinConnections 2. DevicecanoperatewithV current 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated DD suppliedthroughpin13andpin17. CircuitFamily,andtoAN1987,QuiescentCurrentControlfortheRFIntegratedCircuit DeviceFamily.Goto

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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