Product Information

NTE5380

NTE5380 electronic component of NTE

Datasheet
Hockey-puck thyristor; 600V; 150mA; TO200AB

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 194.1 ea
Line Total: USD 194.1

1 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 194.1
5 : USD 176.2
10 : USD 165.6625
25 : USD 158.5125
50 : USD 154.0875
100 : USD 149.875
250 : USD 145.8875

1 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 152.854

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
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NTE5380 Silicon Controlled Rectifier (SCR) for High Speed Switching, 600V, 400 Amp, TO200AB Absolute Maximum Ratings: Maximum Repetitive Peak Voltage, V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V DRM RRM Maximum Non Repetitive Peak Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V RSM Repetitive Peak OffState Current (T = +125C), I , I . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA J DRM RRM Maximum Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Maximum Thermal Resistance, Junction toHeatsink, R thJHS DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.17K/W DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W Maximum Thermal Resistance, Case toHeatsink, R thCHS DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.033K/W DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.017K/W Mounting Torque (10%), F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4900N (500Kg) Electrical Characteristics: Parameter Symbol Test Conditions Rating Unit OnState Conduction Max. Average OnState Current I 180 Conduction, Single Side Cooled, +85C 130 A T(AV) at Heatsink Temperature Half Sine Wave Double Side Cooled, +55C 370 A Max. RMS OnState Current I DC +25C Heatsink Temperature, Double Side Cooled 690 A T(RMS) I t = 10ms 4900 A Max. Peak, One Half Cycle, No Voltage Sinusoidal Half Wave, TSM NonRepetitive Surge Reapplied Initial T = +125C J t = 8.3ms 5130 A Current t = 10ms 100% V 4120 A RRM Reapplied t = 8.3ms 4310 A 2 2 2 Max. I t for Fusing I t t = 10ms No Voltage Sinusoidal Half Wave, 120 KA s Reapplied Initial T = +125C J 2 t = 8.3ms 110 KA s 2 t = 10ms 85 KA s 100% V RRM Reapplied 2 t = 8.3ms 78 KA s Max. Peak OnState Voltage V I = 600V, T = +125C, t = 10ms Sine Wave Pulse 1.8 V TM TM J p Threshold Voltage, Low Level V (16.7% x x I < I < x I ), T = +125C 1.40 V T(TO)1 T(AV) T(AV) J Threshold Voltage, High Level V (I > x I ), T = +125C 1.45 V T(TO)2 T(AV) JElectrical Characteristics (Contd): Parameter Symbol Test Conditions Rating Unit OnState Conduction (Contd) Forward Slope Resistance, r (16.7% x x I < I < x I ), T = +125C 0.67 m t1 T(AV) T(AV) J Low Level Forward Slope Resistance, r (I > x I ), T = +125C 0.58 m t2 T(AV) J High Level Maximum Holding Current I T = +25C, I > 30A 600 mA H J T Typical Latching Current I T = +25C, V = 12V, R = 6, I = 1A 1000 mA L J A a G Switching Max. NonRepetitive Rate of di/dt T = +125C, V = 600V, I = 2 x di/dt 1000 A/s J DRM TM Rise of TurnedOn Current Typical Delay Time t T = +125C, V = 600V, I = 50A DC, t = 1s, 1.1 s d J DRM TM p Resistive Load, gate Pulse: 10V, 5 Source Max. Turn Off Time t T = +125C, I = 30A, Commutating di/dt = 20A/s, 10 20 s p J TM V = 50V, t = 500s, dv/dt = 500V/s R p Blocking Maximum Critical Rate of Rise dv/dt T = +125C, Linear to 80% V 500 V/s J DRM of OffState Voltage Max. Peak Reverse and I , T = +125C, V /V Applied 40 mA RRM J DRM RRM OffState Leakage Current I DRM Triggering Maximum Peak Gate Power P T = +125C, f = 50Hz, d% = 50 60 W GM J Maximum Average Gate Power P 10 W G(AV) Max. Peak Positive Gate Current I T = +125C, t 5ms 10 A GM J p Max. Peak Positive Gate Voltage +V T = +125C, t 5ms 20 V GM J p Max. Peak Negative Gate Voltage V 5 V GM Max. DC Gate Current Required I T = +25C, V = 12V, R = 6 150 mA GT J A a to Trigger Max. DC Gate Voltage Required V T = +25C, V = 12V, R = 6 3 V GT J A a to Trigger Max. DC Gate Current not to I T = +125C, Rated V Applied 20 mA GD J DRM Trigger Max. DC Gate Voltage not to V T = +125C, Rated V Applied 0.25 V GD J DRM Trigger .145 (3.7) Dia Max 8.500 (21.59) 1.650 Max (41.91) Max For No. 6 Screws .755 Cathode .030 (.762) Min (19.18) Cathode Potential (Red) .560 Max (14.22) Gate (White) 1.650 Marking .030 (.762) Min (41.91) Anode Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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