Product Information

NTE5381

NTE5381 electronic component of NTE

Datasheet
Hockey-puck thyristor; 1.2kV; 150mA; TO200AB

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 178.965 ea
Line Total: USD 178.96

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 178.965
10 : USD 145.8
25 : USD 136.08
50 : USD 127.5804

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 192.561

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5381 Silicon Controlled Rectifier (SCR) for High Speed Switching, 1200V, 400 Amp, TO200AB Features: High di/dt with Soft Gate Control High Frequency Operation Low Dynamic Forward Voltage Drop Low Switching Losses at High Frequency Applications: Inverters for UPS, Induction Heating, and Motor Control Choppers Crowbars Voltage: Blocking State Maximums (T = +125C, Note 1 unless otherwise specified) J Repetitive Peak Forward Blocking Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V DRM Repetitive Peak Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V RRM Non Repetitive Transient Peak Reverse Voltage (t 5.0 msec), V . . . . . . . . . . . . . . . . . . 1300V RSM Peak Forward Leakage Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA DRM Peak Reverse Leakage Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA RRM Current: Conducting State Maximums (T = +125C unless otherwise specified) J RMS Forward Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A T(RMS) Average Forward Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A T(AV) One Half Cycle Surge Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4500A TSM 2 2 2 I t for Fusing (for times 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84,000A sec Forward Voltage Drop (I = 625A, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.85V TM J TM Minimum Repetitive Rate of Rise of TurnedOn Current (Note 2), di/dt . . . . . . . . . . . . . . . . 300A/s Switching: (T = +25C unless otherwise specified) J Maximum Turn Off Time, t q (I = 150A, di /dt = 12.5A/s, Reapplied dv/dt = 20V/s. Linear to 0.8V . . . 10 to 50s T R DRM) Typical TurnOn Time (I = 100A, V = 100V, Note 2), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5s T D on Minimum Critical Rate of Rise of OffState Voltage, dv/dt (Exponential to V , T = +125C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V/s DRM J Minimum Rate of Rise of TurnedOn Current (Note 2), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . 800A/s Note 1. Applies for zero or negative gate bias. Note 2. With recommended gate drive. Rev. 1009Gate: Maximum Parameters (T = +25C unless otherwise specified) J Gate Current to Trigger (V = 12V), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA D GT Gate Voltage to Trigger (V = 12V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V D GT Non Triggering Gate Voltage (V = Rated Voltage, T = +125C), V . . . . . . . . . . . . . . 0.15V DRM J GDM Peak Foward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GTM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GRM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G(AV) Thermal and Mechanical: Maximum Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Max Thermal Resistance, JunctiontoHeatsink (Double Side Cooled), R . . . . . . . . . 0.08C/W thJC Max Thermal Resistance, CasetoHeatsink (Double Side Cooled, Lubricated), R . 0.02C/W thCS Mounting Torque Range, F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 to 1400lb. .145 (3.7) Dia Max 8.500 (21.59) Max 1.650 (41.91) Max For No. 6 Screws Cathode .030 (.762) Min .755 Cathode Potential (Red) (19.18) Max .560 (14.22) Gate (White) Marking 1.650 .030 (.762) (41.91) Anode Min Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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