Product Information

PTVS40VS1UR.115

PTVS40VS1UR.115 electronic component of Nexperia

Datasheet
Diode: transil; 400W; 46.8V; 6.2A; unidirectional; SOD123W
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.4111 ea
Line Total: USD 1.23

3100 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1132 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3
Multiples : 1
3 : USD 0.364
25 : USD 0.2028
100 : USD 0.1833
104 : USD 0.156
286 : USD 0.1469

Read More Specifications

     
Manufacturer
Product Category
Breakdown Voltage
Case
Semiconductor Structure
Mounting
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
Operating Temperature
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Additional Infomation About Product

The PTVS40VS1UR.115 is a 40V N-channel MOSFET from Nexperia applied for high efficiency and low on-state resistance for improved system dissipation. This MOSFET is made of SuperCATM technology and comes in IPW60R190C6 package. The transistor has a VDSS of 40V, with an RDS(on) of 1.15O, a RDS(on)@25? of 0.9O, a Coss of 250pF, a gate charge Qg of 15.4nC, a gate resistance Rg of 20O, a switching time of 800ns, and an isolation voltage of 500V.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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