Product Information

PSMN004-60B,118

PSMN004-60B,118 electronic component of Nexperia

Datasheet
Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.645 ea
Line Total: USD 2.64

1559 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1559 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 2.645
10 : USD 2.254
100 : USD 1.909
250 : USD 1.8515
500 : USD 1.725
800 : USD 1.449
2400 : USD 1.449

2328 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 800
Multiples : 800
800 : USD 1.619

2347 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5
Multiples : 1
5 : USD 2.2672
10 : USD 2.0943
100 : USD 1.6016
250 : USD 1.5743
500 : USD 1.5429

232800 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 800
Multiples : 800
800 : USD 1.8018

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Drain-Source On-Res
LoadingGif

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Additional Infomation About Product

PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 15 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications High frequency computer motherboard OR-ing applicationss DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 230 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =75A -54 -nC GD GS D V =48V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -3.1 3.6 m DSon GS D on-state resistance T = 25 C see Figure 9 and 10 jNexperia PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN004-60B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) Nexperia B.V. 2017. All rights reserved PSMN004-60B 2 Product data sheet Rev. 02 15 December 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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