V 1200 V CMF20120D-Silicon Carbide Power MOSFET DS I 42 A D(MAX) TM Z-Fe T MOSFET R 80m DS(on) N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low R DS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives Part Number Package Switch Mode Power Supplies UPS CMF20120D TO-247-3 Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note 42 Fig. 10 V 20V, T = 25C GS C I Continuous Drain Current A D 24 V 20V, T = 100C GS C Pulse width t limited by T jmax P I Pulsed Drain Current 90 A Dpulse T = 25C C I = 20A, V = 50 V, D DD Single Pulse Avalanche Energy 2.2 J Fig. 15 E AS L = 9.5 mH Repetitive Avalanche Energy 1.5 J E t limited by T AR AR jmax I = 20A, V = 50 V, L = 3 mH D DD Repetitive Avalanche Current 20 A I AR t limited by Tjmax AR V Gate Source Voltage -5/+25 V GS Power Dissipation 215 W T =25C Fig. 9 P C tot -55 to T , T Operating Junction and Storage Temperature C J stg +135 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 CMF20120D Rev. DElectrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0V, ID = 100A 2.65 4 VDS = VGS, ID = 1mA V 3.2 4.8 VDS = VGS, ID = 10mA Gate Threshold Voltage V Fig. 11 GS(th) 2.0 V = V , I = 1mA, T = 135C DS GS D J V 2.45 V = V , I = 10mA, T = 135C DS GS D J 1 100 V = 1200V, V = 0V DS GS I Zero Gate Voltage Drain Current A DSS 10 250 V = 1200V, V = 0V, T = 135C DS GS J I Gate-Source Leakage Current 0.25 A V = 20V, V = 0V GSS GS DS 80 100 VGS = 20V, ID = 20A R Drain-Source On-State Resistance m Fig. 3 DS(on) 95 120 V = 20V, I = 20A, T = 135C GS D J 7.9 V = 20V, I = 20A DS DS g Transconductance S Fig. 6 fs 7.4 V = 20V, I = 20A, T = 135C DS DS J Ciss Input Capacitance 1915 VGS = 0V C Output Capacitance 120 oss pF Fig. 13 VDS = 800V C Reverse Transfer Capacitance 13 rss f = 1MHz AC V = 25mV E C Stored Energy 62 J Fig. 14 oss oss V = 800V, V = 0/20V t Turn-On Delay Time 13 DD GS d(on)v I = 20A D t Fall Time 24 fv ns Fig. 17 R = 2.5, R = 40 G(ext) L td(off)v Turn-Off Delay Time 40 Timing relative to V DS trv Rise Time 38 , R Internal Gate Resistance 5 f = 1MHz V = 25mV G AC Built-in SiC Body Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note = 3.5 VGS = -5V, IF 10A, TJ = 25C VSD Diode Forward Voltage V = 3.1 VGS = -2V, IF 10A, TJ = 25C trr Reverse Recovery Time 220 ns = V = -5V, I 20A, T = 25C GS F J Q Reverse Recovery Charge 142 nC V = 800V, Fig. 22 rr R di /dt= 100A/s F I Peak Reverse Recovery Current 2.3 A rrm Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.44 0.51 JC R Case to Sink, w/ Thermal Compound 0.25 CS K/W Fig. 7 R JA Thermal Resistance From Junction to Ambient 40 Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Qgs Gate to Source Charge 23.8 VDD = 800V, VGS = 0/20V Fig. Q Gate to Drain Charge 43.1 nC I =20A gd D 12 Per JEDEC24 pg 27 Q Gate Charge Total 90.8 g 2 CMF20120D Rev. D