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BUK7Y19-100EX

BUK7Y19-100EX electronic component of Nexperia

Datasheet
MOSFET BUK7Y19-100E/LFPAK/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1500
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BUK7Y19-100EX
Nexperia

1500 : USD 0.8111
3000 : USD 0.803
6000 : USD 0.795
9000 : USD 0.7871
12000 : USD 0.7792
15000 : USD 0.7714
24000 : USD 0.7636
30000 : USD 0.7559
75000 : USD 0.7484
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BUK7Y19-100EX
Nexperia

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24000 : USD 0.6324
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BUK7Y19-100EX
Nexperia

1 : USD 1.442
5 : USD 1.302
17 : USD 0.9786
46 : USD 0.9254
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Additional Infomation About Product

BUK7Y19-100E N-channel 100 V, 19 m standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 - - 56 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 169 W tot mb Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 12.1 19 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge V = 10 V I = 15 A V = 80 V - 19 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7Y19-100E N-channel 100 V, 19 m standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y19-100E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7Y19-100E 71910E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j I drain current T = 25 C V = 10 V Fig. 1 - 56 A D mb GS T = 100 C V = 10 V Fig. 1 - 40 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 225 A DM mb p P total power dissipation T = 25 C Fig. 2 - 169 W tot mb T storage temperature -55 175 C stg BUK7Y19-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 November 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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