Product Information

BUK7618-55,118

BUK7618-55,118 electronic component of Nexperia

Datasheet
MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8728 ea
Line Total: USD 1.87

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK7618-55,118
Nexperia

1 : USD 1.8728
10 : USD 1.3228
100 : USD 1.0052
500 : USD 0.8646
800 : USD 0.713
2400 : USD 0.6646
9600 : USD 0.6549
24800 : USD 0.6342
49600 : USD 0.6136

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain Source Breakdown Voltage
Gate Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Rohs Mouser
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK7618-55 N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Electrostatically robust due to integrated protection diodes 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C - - 57 A D mb P total power dissipation - - 125 W tot Static characteristics R drain-source on-state V =10V I =25A - 1518m DSon GS D resistance T =25C j Avalanche ruggedness E non-repetitive I =50A V 25 V - - 125 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init)BUK7618-55 Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7618-55 D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK7618-55 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 26 April 2011 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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