Product Information

BUK7628-100A118

BUK7628-100A118 electronic component of NXP

Datasheet
NXP Semiconductors MOSFET TAPE13 PWR-MOS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.736 ea
Line Total: USD 1.736

1 - Global Stock
Ships to you by
Mon. 01 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you by Mon. 01 Apr

MOQ : 1
Multiples : 1
1 : USD 1.736
10 : USD 1.5782
25 : USD 1.4729
50 : USD 1.4203
100 : USD 1.3151

     
Manufacturer
Product Category
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Packaging
Channel Mode
Configuration
Package Case
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
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BUK7628-100A N-channel TrenchMOS standard level FET Rev. 2 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T=25C --47 A D mb P total power dissipation - - 166 W tot Static characteristics drain-source on-state V =10V I =25A - 2028m R DSon GS D resistance T =25C j Avalanche ruggedness E non-repetitive I =30A V 25 V --45 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS T = 25 C unclamped avalanche energy j(init) D2PAKBUK7628-100A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7628-100A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK7628-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 26 April 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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