Product Information

NCE20TD60BD

NCE20TD60BD electronic component of NCE Power

Datasheet
TO-263 IGBTs ROHS

Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.412 ea
Line Total: USD 1.41

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

NCE20TD60BD
NCE Power

1 : USD 1.412
10 : USD 1.188
30 : USD 1.0273
100 : USD 0.896
500 : USD 0.8715
1000 : USD 0.8618

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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The NCE20TD60BD is an IGBT with TO-263 package manufactured by NCE Power. It is a four-terminal device composed of two insulated-gate bipolar transistors, also known as Insulated Gate Bipolar Transistors (IGBT). The NCE20TD60BD is designed to operate with a typical breakdown voltage of 600V and a rated collector current of 20A. The device has a maximum on-state capability up to 25A, an avalanche energy stability of 250mJ and a maximum operating temperature of 150 degrees Celsius. It also complies with the ROHS standard. The NCE20TD60BD is a powerful device, designed for extreme power switches, or high-frequency converters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wuxi NCE Power Semiconductor

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