Product Information

NP2301AMR-G

NP2301AMR-G electronic component of NATLINEAR

Datasheet
MOSFET P Trench 20V 2.8A 1.2V @ 250uA 80 mΩ @ 2.8A,4.5V SOT-23-3L RoHS

Manufacturer: NATLINEAR
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0369 ea
Line Total: USD 0.74

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

NP2301AMR-G
NATLINEAR

20 : USD 0.0347
200 : USD 0.0278
600 : USD 0.0239
3000 : USD 0.0216
9000 : USD 0.0196
21000 : USD 0.0185

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The NP2301AMR-G is an N-channel 20V field effect transistor (FET) manufactured by NATLINEAR. It is packaged in a lead-free, three-lead SOT-23-3L surface mount package, making it suitable for high-density applications. It features Trench MOSFET technology, which allows for higher current handling capabilities and lower on-resistance compared to other FETs. The P-channel FET has a maximum drain current rating of 2.8A and a drain-source voltage rating of 20V. Additionally, the gate threshold voltage is rated at 1.2V @ 250uA and the on-resistance (Rdss) is rated at 80mOhm @ 2.8A and 4.5V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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