Product Information

ME3587

ME3587 electronic component of MQTSUKI

Datasheet
MOSFET N & P Trench 20V 3.4A,2A 1.2V @ 250uA 45 mΩ @ 3.4A,4.5V TSOP-6 RoHS
Manufacturer: MQTSUKI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.144 ea
Line Total: USD 0.72

2910 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 5
Multiples : 5

Stock Image

ME3587
MQTSUKI

5 : USD 0.1282
50 : USD 0.1046
150 : USD 0.0928
500 : USD 0.0838
3000 : USD 0.0768
6000 : USD 0.0733

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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Additional Infomation About Product

The ME3587 with MOSFET N & P Trench 20V 3.4A,2A 1.2V @ 250uA 45 mΩ @ 3.4A,4.5V TSOP-6 RoHS manufactured by MQTSUKI is a low-voltage, high-current enhancement-mode MOSFET designed to switch high power loads. This device is available in an economical TSOP-6 RoHS package, and features a low on-resistance of 45 mΩ @ 3.4A. Additionally, this part features a maximum absolute drain-source voltage of 20V, and a maximum gate-source voltage of 4.5V. It also supports a maximum drain current of 3.4A and a maximum drain-source saturation voltage of 1.2V @ 250uA. This part is RoHS compliant, and fits a variety of power-supply applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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