Product Information

ME2325-G

ME2325-G electronic component of MQTSUKI

Datasheet
MOSFET P Trench 30V 4.3A 3V @ 250uA 50 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: MQTSUKI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0884 ea
Line Total: USD 0.88

2686 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
2114 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10

Stock Image

ME2325-G
MQTSUKI

10 : USD 0.0812
100 : USD 0.0663
300 : USD 0.0587
3000 : USD 0.0532
6000 : USD 0.0486
9000 : USD 0.0464

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The ME2325-G is a MOSFET P-Trench 30V 4.3A 3V @ 250uA 50 mΩ @ 4.1A, 10V SOT-23 (SOT-23-3) RoHS manufactured by MQTSUKI. It is a three-pin surface-mounted device (SMD) optimized for high-side switching applications. It features an ultra-low RDS(on) at 10V to minimize conduction losses, low gate charge, and fast switching speeds. The device has a wide safe operating temperature range of -40°C to +150°C, making it suitable for harsh automotive and industrial environments. Its low gate drive requirements makes it particularly suitable for low-power applications. The ME2325-G is RoHS compliant and halogen free and suitable for use in lead-free and green systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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