Product Information

M29W400FT5AZA6F

Name: M29W400FT5AZA6F
Brand: Micron
SKU: M29W400FT5AZA6F_Micron
Availability: OutOfStock
Rating: 5 (11 reviews)

M29W400FT5AZA6F electronic component of Micron

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Datasheet

NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 55ns 48-Pin TFBGA T/R

Manufacturer: Micron

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 1.0931 ea
Line Total: USD 2732.75

0 - Global Stock

MOQ: 2500 Multiples: 2500
Pack Size: 2500

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 2500 Multiples : 2500 M29W400FT5AZA6F Micron	2500 : USD 1.0931

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Additional Infomation About Product

M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit (1 Mbit8 / 512 Kbit16) 4-Mbit (512 Kbit8 / 256 Kbit16) Boot Block 3 V Supply Flash memory Features Supply voltage V = 2.7 V to 3.6 V for program, erase and CC read Access time: 55 ns, 70 ns TSOP48 (N) Programming time 12 20 mm 10 s per byte/word typical 19 memory blocks (M29W800F) 1 boot block (top or bottom location) FBGA 3 parameter blocks 15 main blocks 11 memory blocks (M29W400F) TFBGA48 (ZA) 1 boot block (top or bottom location) 6 x 8 mm 3 parameter blocks 7 main blocks Automotive device grade 3: Automotive device grade Program/erase controller Embedded byte/word program algorithms Erase suspend and resume modes Read and program another block during erase suspend Unlock bypass program command Faster production/batch programming Temporary block unprotection mode Common Flash interface 64-bit security code Low power consumption Standby and automatic standby 100,000 program/erase cycles per block Electronic signature Manufacturer code: 0020h Top device code M29W800FT: 22D7h M29W400FT: 00EEh Bottom device code M29W800FB: 225Bh M29W400FB: 00EFh RoHS packages available July 2010 Rev 5 1/56 www.numonyx.com 1Contents M29W800FT/B, M29W400FT/B Contents 1 Description . 6 2 Signal descriptions . 14 2.1 Address inputs (A0-A18) . 14 2.2 Data inputs/outputs (DQ0-DQ7) 14 2.3 Data inputs/outputs (DQ8-DQ14) . 14 2.4 Data input/output or address input (DQ15A-1) . 14 2.5 Chip Enable (E) 14 2.6 Output Enable (G) 14 2.7 Write Enable (W) . 15 2.8 Reset/Block Temporary Unprotect (RP) 15 2.9 Ready/Busy Output (RB) . 15 2.10 Byte/Word Organization Select (BYTE) 15 2.11 V supply voltage 16 CC 2.12 V ground 16 SS 3 Bus operations 17 3.1 Bus read 17 3.2 Bus write 17 3.3 Output disable . 17 3.4 Standby 17 3.5 Automatic standby 17 3.6 Special bus operations . 18 3.7 Electronic signature . 18 3.8 Block protection and blocks unprotection . 18 4 Command interface . 20 4.1 Read/Reset command . 20 4.2 Auto Select command . 20 4.3 Program command 21 4.4 Unlock Bypass command . 21 4.5 Unlock Bypass Program command . 21 2/56

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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