Product Information

M29W640FB70N6E

M29W640FB70N6E electronic component of Micron

Datasheet
Flash Memory 64 Mbit Boot Block 3V STD Flash

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5431 ea
Line Total: USD 2.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.5431
10 : USD 2.3946
100 : USD 2.34
250 : USD 2.2854
500 : USD 2.2308
1000 : USD 2.223

     
Manufacturer
Product Category
Package / Case
Memory Size
Interface Type
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Flash Memory Type
Flash Memory Configuration
Memory Case Style
No. Of Pins
Access Time
Product Range
Rohs Phthalates Compliant
Msl
Svhc
Base Number
Ic Generic Number
Logic Function Number
Memory Type
Memory Voltage Vcc
Operating Temperature Range
Page / Burst Read Access
Sector Type
Supply Voltage Range
Termination Type
Voltage Vcc
LoadingGif

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M29W640FT M29W640FB 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Figure 1. Packages Features summary Supply Voltage V = 2.7V to 3.6V for Program, Erase, CC Read V =12 V for Fast Program (optional) PP Asynchronous Random/Page Read Page Width: 4 Words TSOP48 (N) Page Access: 25ns 12 x 20mm Random Access: 60ns, 70ns Programming Time FBGA 10 s per Byte/Word typical 4 Words/8 Bytes Program 135 memory blocks TFBGA48 (ZA) 1 Boot Block and 7 Parameter Blocks, 6x8mm 8 KBytes each (Top or Bottom Location) 127 Main Blocks, 64 KBytes each Program/Erase Controller Electronic Signature Embedded Byte/Word Program algorithms Manufacturer Code: 0020h Program/Erase Suspend and Resume Table 1. Device Codes Read from any Block during Program Root Part Number Device Code Suspend Read and Program another Block during M29W640FT 22EDh Erase Suspend M29W640FB 22FDh Unlock Bypass Program command Faster Production/Batch Programming ECOPACK packages V /WP pin for Fast Program and Write Protect PP Temporary Block Unprotection mode Common Flash Interface 64-bit Security Code Extended Memory Block Extra block used as security block or to store additional information Low power consumption Standby and Automatic Standby 100,000 Program/Erase cycles per block Rev3 December 2005 1/72 www.st.com 1M29W640FT, M29W640FB Contents 1 Summary description 7 2 Signal descriptions . 11 2.1 Address Inputs (A0-A21) 11 2.2 Data Inputs/Outputs (DQ0-DQ7) 11 2.3 Data Inputs/Outputs (DQ8-DQ14) . 11 2.4 Data Input/Output or Address Input (DQ15A1) 11 2.5 Chip Enable (E) . 11 2.6 Output Enable (G) . 11 2.7 Write Enable (W) 12 2.8V /Write Protect (V WP) . 12 PP PP/ 2.9 Reset/Block Temporary Unprotect (RP) 13 2.10 Ready/Busy Output (RB) . 13 2.11 Byte/Word Organization Select (BYTE) 13 2.12V Supply Voltage (2.7V to 3.6V) 13 CC 2.13V Ground 14 SS 3 Bus operations 15 3.1 Bus Read . 15 3.2 Bus Write . 15 3.3 Output Disable . 15 3.4 Standby . 15 3.5 Automatic Standby 16 3.6 Special Bus Operations 16 3.6.1 Electronic Signature . 16 3.6.2 Block Protect and Chip Unprotect . 16 4 Command Interface . 19 4.1 Standard commands . 19 4.1.1 Read/Reset command 19 4.1.2 Auto Select command 19 4.1.3 Read CFI Query command 20 2/72

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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