WWW.Microsemi .COM LX5518 LX5518 LX5518 InGaP HBT 2.4 2.5 GHz Power Amplifier TM PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES Advanced InGaP HBT The LX5518 is a high gain and high LX5518 also features an on-chip 2.4-2.5GHz Operation power amplifier optimized for power detector at the output port of Single-Polarity 3-5V Supply 802.11b/g/n applications in the 2.4-2.5 the PA to help reduce BOM cost and Power Gain ~ 30 dB GHz frequency range. The PA is PCB space for implementation of 26dBm 3%EVM,802.11g/5V implemented as a three-stage monolithic power control in a typical wireless 24dBm 3.5%EVM,80211g/3.3V microwave integrated circuit (MMIC) system. 28dBm CCK,802.11b/5V with active bias, on-chip input The LX5518 is available in a 16- 27dBm CCK,802.11b/3.3V matching, and output pre-matching. pin 3mm x 3mm quad flat no lead 24.5% Efficiency 28dBm/5V The device is manufactured with an package (QFN 33-16L). The Complete On-Chip Input Match Simple Output Match for Optimal InGaP/GaAs Heterojunction Bipolar compact footprint, low profile, and EVM Transistor (HBT) IC process excellent thermal capability make the Temperature-Compensated On- (MOCVD). It operates with a single LX5518 an ideal solution for Chip Output Power Detector with positive voltage supply of 3-5V, and 802.11b/g/n applications. Wide Dynamic Range provides a power gain of 30dB and an 2 Small Footprint: 3x3mm output power of +26dBm at 5V for 3% Low Profile: 0.9mm EVM in the 2.4-2.5GHz. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM TM INFORMATION Thank you for your interest in Microsemi Analog Mixed Signal products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link