ARF463BP1G

ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D TO-247 Common G Source S RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 125 Volt, 81.36MHz Characteristics: Low Cost Common Source RF Package. Output Power = 100 Watts. Low Vth thermal coefficient. Gain = 15dB (Class AB) Low Thermal Resistance. Efficiency = 75% (Class C) Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter ARF463A BP1(G) UNIT V Drain-Source Voltage 500 DSS Volts V Drain-Gate Voltage 500 DGO I Continuous Drain Current T = 25C 9 Amps D C V Gate-Source Voltage 30 Volts GS P Total Power Dissipation T = 25C 180 Watts D C R Junction to Case 0.70 C/W JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 DSS GS D Volts 1 V (ON) On State Drain Voltage (I (ON) = 4.5A, V = 10V) 5.0 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 25V, I = 4.5A) 23 4 mhos fs DS D V (TH) Gate Threshold Voltage (V = V , I = 50mA) 35 Volts GS DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS ARF463A BP1(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 670 iss V = 0V GS C Output Capacitance V = 50V 120 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 50 rss t Turn-on Delay Time 5.6 d(on) V = 15V GS t Rise Time V = 0.5 V 4.3 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 13.5 d(off) R = 1.6 t G Fall Time 4.2 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 81.36 MHz 13 15 dB PS V = 0V V = 125V Drain Efficiency GS DD 70 75 % P = 100W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C V = 150V DD 25 1000 P = 150W C out iss 500 20 C oss 15 C 100 rss 10 50 5 10 0 30 45 60 75 90 105 120 .1 .5 1 5 10 50 200 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 36 T = -55C 100uS J OPERATION HERE LIMITED BY R (ON) DS V > I (ON) x R (ON)MAX. DS D DS 10 6 250SEC. PULSE TEST 1mS <0.5 % DUTY CYCLE 5 4 10mS 1 100mS .5 2 DC T = +125C T = -55C J J T =+25C C T =+150C J T = +25C J SINGLE PULSE .1 0 24 6 8 10 1 10 100 500 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4924 Rev B 3-2006 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D