Product Information

ARF461BG

ARF461BG electronic component of Microchip

Datasheet
RF MOSFET Transistors FG, MOSFET, 1000V, TO-247, RoHS
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 60.6165 ea
Line Total: USD 60.62

88 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
192 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

ARF461BG
Microchip

1 : USD 60.6165
100 : USD 52.739

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Vgs - Gate-Source Voltage
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Channel Mode
Rad Hardened
Frequency Max
Forward Transconductance Typ
Input Capacitance Typ Vds
Output Capacitance Typ Vds
Power Gain Typ Vds
Drain Efficiency Typ
Reverse Capacitance Typ
Drain Source Voltage Max
Brand
Forward Transconductance - Min
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

TO-247 ARF461A(G) ARF461B(G) Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push- pull scienti c, commercial, medical and industrial RF power ampli er applications up to 65 MHz. They have been optimized for both linear and high ef ciency classes of operation. Speci ed 250 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package. Output Power = 150 Watts. Low Vth thermal coef cient. Gain = 13dB (Class AB) Low Thermal Resistance. Ef ciency = 75% (Class C) Optimized SOA for Superior Ruggedness. RoHS Compliant MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter ARF461AG/BG Unit V Drain-Source Voltage 1000 DSS V V DGO Drain-Gate Voltage 1000 I D Continuous Drain Current T = 25C 6.5 A C V Gate-Source Voltage 30 V GS P D Total Power Dissipation T = 25C 250 W C R Junction to Case 0.50 C/W JC T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 1000 DSS GS D V 1 V On State Drain Voltage (I = 3.25A, V = 10V) 6.5 DS(ON) D(ON) GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8V , V = 0, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS DS DS g Forward Transconductance (V = 25V, I = 3.25A) 3 4 mhos fs DS D V Gate Threshold Voltage (V = V , I = 50mA) 3 5 Volts GS(TH) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics ARF461A/B Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance 1700 ISS V = 0V GS C Output Capacitance 175 V = 50V pF oss DS f = 1MHz C Reverse Transfer Capacitance 50 rss t Turn-On Delay Time 8 d(on) V = 15V GS t Rise Time 5 V = 0.5V r DD DSS ns I = I 25C t Turn-off Delay Time 21 D D (Cont.) d(off) R = 1.6 t G f Fall Time 10.1 Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit G PS Common Source Ampli er Power Gain 13 15 dB f = 40.68MHz Drain Ef ciency V = 0V V = 250V 70 75 % GS DD P = 150W Electrical Ruggedness VSWR 10:1 No Degradation in Output Power OUT 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the speci cations and information contained herein. 30 5000 Class C V = 150V DD C iss 25 P = 150W out 1000 20 500 C oss 15 100 C rss 10 50 5 10 0 30 45 60 75 90 105 120 .1 .5 1 5 10 50 200 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 26 T = -55C 100uS J OPERATION HERE LIMITED BY R (ON) DS 10 V > I (ON) x R (ON)MAX. DS D DS 250 SEC. PULSE TEST 6 <0.5 % DUTY CYCLE 5 1mS 4 10mS 1 .5 100mS 2 T = +125C T = -55C J J T =+25C C DC T =+150C J T = +25C SINGLE PULSE J .1 0 0 2 4 6 8 1 10 100 1000 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-5987 Rev D 6-2008 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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