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93LC86C-E/P

93LC86C-E/P electronic component of Microchip

Datasheet
EEPROM 1024x16-2048x8 2.5V EXT TEMP, PDIP8

Manufacturer: Microchip
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Price (USD)

1: USD 0.8788 ea
Line Total: USD 0.88

625 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
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622 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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93LC86C-E/P
Microchip

1 : USD 0.805
25 : USD 0.7705
120 : USD 0.7475

     
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93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 16K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin PE Pin Word Size Temp Ranges Packages 93AA86A 1.8-5.5 No No 8-bit I OT 93AA86B 1.8-5-5 No No 16-bit I OT 93LC86A 2.5-5.5 No No 8-bit I, E OT 93LC86B 2.5-5.5 No No 16-bit I, E OT 93C86A 4.5-5.5 No No 8-bit I, E OT 93C86B 4.5-5.5 No No 16-bit I, E OT 93AA86C 1.8-5.5 Yes Yes 8 or 16-bit I P, SN, ST, MS 93LC86C 2.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS 93C86C 4.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS Features Description Low-power CMOS technology The Microchip Technology Inc. 93XX86A/B/C devices are 16K bit low-voltage serial Electrically Erasable ORG pin to select word size for 86C version PROMs (EEPROM). Word-selectable devices such as 2048 x 8-bit organization A devices (no ORG) the 93XX86C are dependent upon external logic 1024 x 16-bit organization B devices (no ORG) levels driving the ORG pin to set word size. For Program Enable pin to write-protect the entire dedicated 8-bit communication, the 93XX86A devices array are available, while the 93XX86B devices provide Self-timed ERASE/WRITE cycles (including dedicated 16-bit communication, available on SOT-23 auto-erase) devices only. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Automatic ERAL before WRAL Advanced CMOS technology makes these devices Power-on/off data protection circuitry ideal for low-power, nonvolatile memory applications. Industry standard 3-wire serial I/O The entire 93XX Series is available in standard pack- Device Status signal (READY/BUSY ) ages including 8-lead PDIP and SOIC, and advanced Sequential READ function packaging including 8-lead MSOP, 6-lead SOT-23, 1,000,000 E/W cycles and 8-lead TSSOP. Pb-free (Pure Matte Sn) finish is also available. Data retention > 200 years Temperature ranges supported: Package Types (not to scale) - Industrial (I) -40C to +85C PDIP/SOIC SOT-23 - Automotive (E) -40C to +125C (P, SN) (OT) Pin Function Table CS 1 8 VCC 1 6 DO VCC CLK 2 7 PE 2 5 Name Function VSS CS DI 3 6 ORG 3 4 DI CLK CS Chip Select DO 4 5 VSS CLK Serial Data Clock TSSOP/MSOP DI Serial Data Input (ST, MS) DO Serial Data Output 1 8 CS VCC VSS Ground 2 CLK 7 PE PE Program Enable 3 DI 6 ORG 4 5 ORG Memory Configuration DO VSS VCC Power Supply 2004 Microchip Technology Inc. DS21797D-page 193AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS VCC = 1.8V to 5.5V All parameters apply over the specified Industrial (I): TA = -40C to +85C ranges unless otherwise noted. Automotive (E): TA = -40C to +125C Param. Symbol Parameter Min Typ Max Units Conditions No. D1 VIH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS to VCC D6 ILO Output leakage current 1 AVOUT = VSS to VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 3 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 2.5V CC read Read current CLK = 3 MHz, VCC = 5.5V D9 I 1 mA F 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = Cs = 0V ORG = DI = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect 93AA86A/B/C, 93LC86A/B/C 1.5V V (Note 1) 93C86A/B/C 3.8V V Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG pin not available on A or B versions. 3: READY/BUSY status must be cleared from DO, see Section 3.4 Data Out (DO). DS21797D-page 2 2004 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Supertex
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Vitesse / Microsemi

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