Product Information

93LC86CT-I/MC

93LC86CT-I/MC electronic component of Microchip

Datasheet
Memory; EEPROM; Microwire; 2kx8/1kx16bit; 2.5÷5.5V; 3MHz; DFN8

Manufacturer: Microchip
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Price (USD)

3300: USD 0.7119 ea
Line Total: USD 2349.27

0 - Global Stock
MOQ: 3300  Multiples: 3300
Pack Size: 3300
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3300
Multiples : 3300

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93LC86CT-I/MC
Microchip

3300 : USD 0.7442

0 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 3300
Multiples : 3300

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93LC86CT-I/MC
Microchip

3300 : USD 0.667

0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3
Multiples : 1

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93LC86CT-I/MC
Microchip

3 : USD 1.036
10 : USD 0.98
19 : USD 0.868
51 : USD 0.826
100 : USD 0.812

     
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93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 16K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin PE Pin Word Size Temp Ranges Packages 93AA86A 1.8-5.5 No No 8-bit I OT 93AA86B 1.8-5-5 No No 16-bit I OT 93LC86A 2.5-5.5 No No 8-bit I, E OT 93LC86B 2.5-5.5 No No 16-bit I, E OT 93C86A 4.5-5.5 No No 8-bit I, E OT 93C86B 4.5-5.5 No No 16-bit I, E OT 93AA86C 1.8-5.5 Yes Yes 8 or 16-bit I P, SN, ST, MS, MC 93LC86C 2.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS, MC 93C86C 4.5-5.5 Yes Yes 8 or 16-bit I, E P, SN, ST, MS, MC Features: Description: Low-power CMOS technology The Microchip Technology Inc. 93XX86A/B/C devices are 16K bit low-voltage serial Electrically Erasable ORG pin to select word size for 86C version PROMs (EEPROM). Word-selectable devices such as 2048 x 8-bit organization A devices (no ORG) the 93XX86C are dependent upon external logic 1024 x 16-bit organization B devices (no ORG) levels driving the ORG pin to set word size. In the Program Enable pin to write-protect the entire SOT-23 package, the 93XX86A devices provide array (86C version only) dedicated 8-bit memory organization, while the Self-timed erase/write cycles (including 93XX86B devices provide dedicated 16-bit memory auto-erase) organization. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Automatic ERAL before WRAL Advanced CMOS technology makes these devices Power-on/off data protection circuitry ideal for low-power, nonvolatile memory applications. Industry standard 3-wire serial I/O The entire 93XX Series is available in standard Device Status signal (Ready/Busy) packages including 8-lead PDIP and SOIC, and Sequential read function advanced packaging including 8-lead MSOP, 6-lead 1,000,000 E/W cycles SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. Pb-free (Pure Matte Sn) finish is available. Data retention > 200 years Temperature ranges supported: Package Types (not to scale) - Industrial (I) -40C to +85C PDIP/SOIC SOT-23 - Automotive (E) -40C to +125C (P, SN) (OT) Pin Function Table CS 1 8 VCC 1 6 DO VCC CLK 2 7 PE Name Function 2 5 VSS CS DI 3 6 ORG 3 4 DI CS Chip Select CLK DO 4 5 VSS CLK Serial Data Clock TSSOP/MSOP DFN DI Serial Data Input (MC) (ST, MS) DO Serial Data Output 1 CS 8 VCC 1 8 CS VCC SS Ground V 7 PE CLK 2 2 CLK 7 PE PE Program Enable 6 ORG DI 3 3 DI 6 ORG DO 4 5 VSS ORG Memory Configuration 4 5 DO VSS CC Power Supply V 2005 Microchip Technology Inc. DS21797G-page 193AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply over the specified Industrial (I): TA = -40C to +85C, VCC = +1.8V to 5.5V ranges unless otherwise noted. Automotive (E): TA = -40C to +125C, VCC = +2.5V to 5.5V Param. Symbol Parameter Min Typ Max Units Conditions No. IH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V D1 V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 3 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 2.5V D9 ICC read Read current 1 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = CS = 0V ORG = DI PE = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect (Note 1) 1.5 V 93AA86A/B/C, 93LC86A/B/C 3.8 V 93C86A/B/C Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG and PE pin not available on A or B versions. 3: Ready/Busy status must be cleared from DO, see Section 3.4 Data Out (DO). DS21797G-page 2 2005 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Microchip / Microsemi
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MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
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Microsemi Corporation
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ROVING NETWORKS INC
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ROVING NETWORKS, INC.
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SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
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VECTRON INTERNATIONAL
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Vitesse / Microsemi

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