Product Information

25C080T-I/SN

25C080T-I/SN electronic component of Microchip

Datasheet
EEPROM Serial-SPI 8K-bit 1K x 8 5V 8-Pin SOIC N T/R

Manufacturer: Microchip
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Price (USD)

1: USD 1.15 ea
Line Total: USD 1.15

2291 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3201 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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25C080T-I/SN
Microchip

1 : USD 1.3532
10 : USD 1.3316
25 : USD 1.31
100 : USD 1.2885
250 : USD 1.267
500 : USD 1.2416
1000 : USD 1.2416
3000 : USD 1.2416

2291 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

25C080T-I/SN
Microchip

1 : USD 1.15
25 : USD 1.1362
100 : USD 1.1362

     
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25AA080/ Not recommended for new designs Please use 25AA080A/B or 25LC080A/B. 25AA080/25LC080/25C080 8K SPI Bus Serial EEPROM Device Selection Table Description: The Microchip Technology Inc. 25AA080/25LC080/ Part VCC Max. Clock Temp. * 25C080 (25XX080) are 8 Kbit Serial Electrically Number Range Frequency Ranges Erasable PROMs. The memory is accessed via a 25AA080 1.8-5.5V 1 MHz I simple Serial Peripheral Interface (SPI) compati- ble serial bus. The bus signals required are a clock 25LC080 2.5-5.5V 2 MHz I input (SCK) plus separate data in (SI) and data out 25C080 4.5-5.5V 3 MHz I,E (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Features: Communication to the device can be paused via the Low-power CMOS technology: hold pin (HOLD). While the device is paused, transi- tions on its inputs will be ignored, with the exception of - Write current: 3 mA maximum chip select, allowing the host to service higher priority - Read current: 500 A typical interrupts. - Standby current: 500 nA typical 1024 x 8-bit organization Package Types 16 byte page Write cycle time: 5 ms max. PDIP/SOIC Self-timed erase and write cycles CS 1 8 VCC Block write protection: SO 2 7 HOLD - Protect none, 1/4, 1/2 or all of array WP 3 6 SCK Built-in write protection: VSS 4 5 SI - Power-on/off data protection circuitry - Write enable latch - Write-protect pin Sequential read Block Diagram High reliability: Status HV Generator - Endurance: 1 M cycles Register - Data retention: > 200 years - ESD protection: > 4000V 8-pin PDIP and SOIC (150 mil) Temperature ranges supported: EEPROM Memory X - Industrial (I): -40Cto +85C I/O Control Array Control - Automotive (E) (25C080): -40C to +125C Logic Logic Dec Page Latches SI SO Y Decoder CS SCK Sense Amp. HOLD R/W Control WP VCC *25XX080 is used in this document as a generic part number for the VSS 25AA080/25LC080/25C080 devices. SPI is a trademark of Motorola Inc. 2004 Microchip Technology Inc. DS21230D-page 125AA080/25LC080/25C080 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C Soldering temperature of leads (10 seconds) .......................................................................................................+300C ESD protection on all pins......................................................................................................................................... 4 KV NOTICE: Stresses above those listed under Maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. 1.1 DC Characteristics Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 4.5V to 5.5V (25C080 only) Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 2.0 VCC+1 V VCC 2.7V (Note) voltage D002 VIH2 0.7 VCC VCC+1 V VCC< 2.7V (Note) D003 VIL1 Low-level input -0.3 0.8 V VCC 2.7V (Note) voltage D004 VIL2-0.3 0.3 VCC VVCC < 2.7V (Note) D005 VOL Low-level output 0.4 VIOL = 2.1 mA voltage D006 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V D007 VOH High-level output VCC -0.5 V IOH = -400 A voltage D008 ILI Input leakage current -10 10 ACS = VCC, VIN = VSS TO VCC D009 ILO Output leakage -10 10 ACS = VCC, VOUT = VSS TO VCC current D010 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D011 ICC Read 1 mA VCC = 5.5V FCLK = 3.0 MHz 500 A SO = Open Operating Current VCC = 2.5V FCLK = 2.0 MHz SO = Open D012 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D013 ICCS 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current 1 A VSS CS = VCC = 2.5V, Inputs tied to VCC or VSS Note: This parameter is periodically sampled and not 100% tested. DS21230D-page 2 2004 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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