Product Information

25C160/P

25C160/P electronic component of Microchip

Datasheet
Microchip Technology EEPROM 2kx8 5V

Manufacturer: Microchip
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Price (USD)

1: USD 1.6356 ea
Line Total: USD 1.64

405 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
385 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

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25C160/P
Microchip

1 : USD 1.426
25 : USD 1.3685
120 : USD 1.334
540 : USD 1.3225

     
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25XX160 Not recommended for new designs Please use 25AA160A/B or 25LC160A/B. 25AA160/25LC160/25C160 16K SPI Bus Serial EEPROM Device Selection Table Description: The Microchip Technology Inc. 25AA160/25LC160/ Part VCC Max Clock Temp * 25C160 (25XX160) are 16 Kbit Serial Electrically Number Range Frequency Ranges Erasable PROMs. The memory is accessed via a 25AA160 1.8-5.5V 1 MHz I simple Serial Peripheral Interface (SPI) compati- ble serial bus. The bus signals required are a clock 25LC160 2.5-5.5V 2 MHz I input (SCK) plus separate data in (SI) and data out 25C160 4.5-5.5V 3 MHz I,E (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Features: Communication to the device can be paused via the Low-power CMOS technology: hold pin (HOLD). While the device is paused, transi- tions on its inputs will be ignored, with the exception of - Write current: 3 mA maximum chip select, allowing the host to service higher priority - Read current: 500 A typical interrupts. - Standby current: 500 nA typical 2048 x 8-bit organization Package Types 16 byte page Write cycle time: 5 ms max. PDIP/SOIC Self-timed erase and write cycles CS 1 8 VCC Block write protection: HOLD SO 2 7 - Protect none, 1/4, 1/2 or all of array WP 3 6 SCK Built-in write protection: VSS 4 5 SI - Power on/off data protection circuitry - Write enable latch - Write-protect pin Sequential read Block Diagram High reliability: Status HV Generator - Endurance: 1 M cycles Register - Data retention: > 200 years - ESD protection: > 4000V 8-pin PDIP and SOIC packages Temperature ranges supported: EEPROM Memory X I/O Control - Industrial (I): -40Cto +85C Array Control Logic Logic Dec - Automotive (E) (25C160): -40C to +125C Page Latches SI SO Y Decoder CS SCK Sense Amp. HOLD R/W Control WP VCC *25XX160 is used in this document as a generic part number VSS for the 25AA160/25LC160/25C160 devices. SPI is a trademark of Motorola Inc. 2004 Microchip Technology Inc. DS21231D-page 125AA160/25LC160/25C160 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C Soldering temperature of leads (10 seconds) .......................................................................................................+300C ESD protection on all pins......................................................................................................................................... 4 KV NOTICE: Stresses above those listed under Maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. 1.1 DC Characteristics Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 4.5V to 5.5V (25C160 only) Param. Sym. Characteristics Min. Max. Units Conditions No. IH1 High-level input 2.0 VCC+1 V VCC 2.7V (Note) D1 V voltage D2 VIH2 0.7 VCC VCC+1 V VCC< 2.7V (Note) D3 VIL1 Low-level input -0.3 0.8 V VCC 2.7V (Note) voltage D4 VIL2 -0.3 0.3 VCC VVCC < 2.7V (Note) D5 VOL Low -level output 0.4 VIOL = 2.1 mA voltage D6 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V D7 VOH High-level output VCC -0.5 V IOH = -400 A voltage D8 ILI Input leakage current -10 10 ACS = VCC, VIN = VSS TO VCC D9 ILO Output leakage -10 10 ACS = VCC, VOUT = VSS TO VCC current D10 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D11 ICC Read 1 mA VCC = 5.5V FCLK = 3.0 MHz Operating Current 500 A SO = Open VCC = 2.5V FCLK = 2.0 MHz SO = Open CC Write 5 mA VCC = 5.5V D12 I 3 mA VCC = 2.5V D13 ICCS Standby Current 5 A CS = VCC = 5.5V, Inputs tied to VCC or 1 A VSS CS = VCC = 2.5V, Inputs tied to VCC or VSS Note: This parameter is periodically sampled and not 100% tested. DS21231D-page 2 2004 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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