Product Information

1N5711

1N5711 electronic component of Microchip

Datasheet
Diode Schottky 70V 0.033A 2-Pin DO-35
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.6585 ea
Line Total: USD 6.66

126 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
126 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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1N5711
Microchip

1 : USD 6.6585
100 : USD 6.6585

696 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2
Multiples : 1

Stock Image

1N5711
Microchip

2 : USD 6.77

Read More Specifications

     
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Product Category
RoHS - XON
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Package / Case
Technology
Packaging
Brand
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detec- tion and pulse application with broad dynamic range. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 70 V RRM I Forward Continuous Current* T = 25C 15 mA F a P Power Dissipation* T = 25C 430 mW tot a T Storage and Junction Temperature Range - 65 to 200 C stg T - 65 to 200 j T Maximum Lead Temperature for Soldering during 10s at 4mm 230 C L from Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 400 C/W th(j-a) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V 70 V BR T = 25C I = 10A amb R V * * 0.41 V F T = 25CI = 1mA amb F 1 T = 25CI = 15mA amb F I * * T = 25CV = 50V 0.2 A R amb R DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 0V f = 1MHz 2 pF amb R 100 ps T = 25CI = 5mA Krakauer Method amb F * On infinite heatsink with 4mm lead length ** Pulse test: t 300s < 2%. p Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/31N5711 Fig. 1: Forward current versus forward voltage at Fig. 2: Capacitance C versus reverse applied low level (typical values). voltage V (typical values). R Fig. 3: Reverse current versus ambient tempera- Fig. 4: Reverse current versus continuous reverse ture. voltage (typical values). 2/3

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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