MDQ16N50GTP

MDQ16N50G N-Channel MOSFET 500V MDQ16N50G N-Channel MOSFET 500V, 16.5A, 0.35 General Description Features V = 500V DS These N-channel MOSFET are produced using advanced I = 16.5A V = 10V D GS MagnaChips MOSFET Technology, which provides low on- R 0.35 V = 10V DS(ON) GS state resistance, high switching performance and excellent quality. Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply HID Lighting D G TO-247 S G D G S G o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 500 V DSS Gate-Source Voltage V 30 V GSS o T =25 C 16.5 A C Continuous Drain Current I D o T =100 C 10.4 A C (1) Pulsed Drain Current IDM 66 A o T =25 C 215 W C Power Dissipation PD o o Derate above 25 C 1.64 W/ C (1) Repetitive Avalanche Energy E 21.5 mJ AR (3) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (4) Single Pulse Avalanche Energy E 780 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg * I limited by maximum junction temperature D Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 40 JA o C/W (1) Thermal Resistance, Junction-to-Case R 0.58 JC 1 Jun 2011 Version 1.2 MagnaChip Semiconductor Ltd. MDQ16N50G N-Channel MOSFET 500V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDQ16N50GTP -55~150 C TO-247 Tube Pb Free o MDQ16N50GTH -55~150 C TO-247 Tube Halogen Free o Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 500 - - V DSS D GS Gate Threshold Voltage V V = V , I = 250A 3.0 - 5.0 V GS(th) DS GS D Drain Cut-Off Current I V = 500V, V = 0V - - 1 A DSS DS GS Gate Leakage Current I V = 30V, V = 0V - - 100 nA GSS GS DS Drain-Source ON Resistance R V = 10V, I = 8.3A 0.30 0.35 DS(ON) GS D Forward Transconductance g V = 30V, I = 8.3A - 14.8 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 34.9 - g (3) Gate-Source Charge Q V = 400V, I = 16A, V = 10V - 12.4 - nC gs DS D GS Gate-Drain Charge Q - 14.2 - gd Input Capacitance C - 1724 - iss Reverse Transfer Capacitance C V = 25V, V = 0V, f = 1.0MHz - 8.3 - pF rss DS GS Output Capacitance C - 226 - oss Turn-On Delay Time td(on) - 46 - Rise Time t - 88.5 - r V = 10V, V = 250V, I = 16A, GS DS D (3) ns R = 25 G Turn-Off Delay Time t - 96.5 - d(off) Fall Time t - 41 - f Drain-Source Body Diode Characteristics Maximum Continuos Drain to Source I - - - 16.5 A S Diode Forward Current Source-Drain Diode Forward Voltage V I = 16.5A, V = 0V - - 1.4 V SD S GS Body Diode Reverse Recovery Time t - 325 - ns rr (3) I = 16A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 3.34 - C rr Notes : 1. Pulse width is based on R & R and the maximum allowed junction temperature of 150C. JC JA 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature T =150C. J(MAX) 3. I 16.0A, di/dt200A/us, V BVdss, R =25, Starting T =25C SD DD g J 4. L=5.16mH, I =16.5A, V =50V, R =25, Starting T =25C AS DD g J 2 Jun 2011 Version 1.2 MagnaChip Semiconductor Ltd.