MDD1501RH

MDD1501 Single N-Channel Trench MOSFET 30V MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDD1501 uses advanced MagnaChips MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) < 5.6m V = 10V quality. MDD1501 is suitable device for DC to DC GS converter and general purpose applications. < 8.6m V = 4.5V GS 100% UIL Tested 100% Rg Tested D G S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS o T =25 C 67.4 C o T =70 C 53.9 C (1) Continuous Drain Current I A D o (3) T =25 C 25.1 A o (3) T =70 C 20.2 A Pulsed Drain Current I 100 A DM o T =25 C 44.6 C o TC=70 C 28.5 Power Dissipation P W D o (3) T =25 C 6.2 A o (3) T =70 C 4.0 A (2) Single Pulse Avalanche Energy E 94 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 20.0 JA o C/W Thermal Resistance, Junction-to-Case R 2.8 JC 1 May. 2011. Version 1.3 MagnaChip Semiconductor Ltd. MDD1501 Single N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status o MDD1501RH -55~150 C D-PAK Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T =25 C) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.55 1.95 2.7 GS(th) DS GS D V = 30V, V = 0V - - 1 DS GS Drain Cut-Off Current I DSS o T =55 C - - 5 A J Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 20A - 4.9 5.6 GS D o Drain-Source ON Resistance R T =125 C - 7.1 8.1 m DS(ON) J V = 4.5V, I = 16A - 7.2 8.6 GS D Forward Transconductance g V = 5V, I = 10A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q 15.5 20.7 25.9 g(10V) Total Gate Charge Q 7.6 10.1 12.6 g(4.5V) V = 15.0V, I = 20A, DS D nC V = 10V GS Gate-Source Charge Q - 3.7 - gs Gate-Drain Charge Q - 2.9 - gd Input Capacitance C 1013 1350 1688 iss V = 15.0V, V = 0V, DS GS Reverse Transfer Capacitance C 99 132 165 pF rss f = 1.0MHz Output Capacitance C 195 261 326 oss Turn-On Delay Time t - 8.8 - d(on) Rise Time t - 12.2 - r V = 10V, V = 15.0V, GS DS ns I = 20A , R = 3.0 D G Turn-Off Delay Time t - 29.5 - d(off) Fall Time t - 8.6 - f Gate Resistance Rg f=1 MHz - 1.5 2.5 Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 20A, V = 0V - 0.8 1.1 V SD S GS Body Diode Reverse Recovery Time t - 22.4 33.6 ns rr I = 20A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 14.0 21.0 nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. E is tested at starting Tj = 25, L = 0.1mH, I = 24.0A, V = 27V, V = 10V. AS AS DD GS 3. T < 10sec. 2 May. 2011. Version 1.3 MagnaChip Semiconductor Ltd.