Advance Technical Information High Voltage V = 1700V IXYH10N170CV1 CES TM XPT IGBT I = 10A C110 w/ Diode V 4.1V CE(sat) t = 70ns fi(typ) TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1700 V CES J V T = 25C to 175C, R = 1M 1700 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 36 A C25 C G = Gate C = Collector I T = 110C 10 A C110 C E = Emitter Tab = Collector I T = 110C 22 A F110 C I T = 25C, 1ms 84 A CM C SSOA V = 15V, T = 150C, R = 10 I = 40 A GE VJ G CM (RBSOA) Clamped Inductive Load 1360 V P T = 25C 280 W C C T -55 ... +175 C Features J T 175 C JM T -55 ... +175 C High Voltage Package stg High Blocking Voltage T Maximum Lead Temperature for Soldering 300 C L Low Saturation Voltage T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1700 V Switch-Mode and Resonant-Mode CES C GE Power Supplies V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Uninterruptible Power Supplies (UPS) Laser Generators I V = V , V = 0V 25 A CES CE CES GE Capacitor Discharge Circuits T = 150C 5 mA J AC Switches I V = 0V, V = 20V 100 nA GES CE GE V I = 10A, V = 15V, Note 1 3.6 4.1 V CE(sat) C GE T = 150C 4.9 V J 2017 IXYS CORPORATION, All Rights Reserved. DS100784A(5/17)IXYH10N170CV1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 10A, V = 10V, Note 1 5.4 9.0 S fs C CE Q S D2 R R Gate Input Resistance 10 Gi D1 D 0P1 C 930 pF 4 ies R1R1R1R1 1 2 3 IXYS OPTION C V = 25V, V = 0V, f = 1MHz 74 pF oes CE GE L1 C C 20 pF res E1 L Q 46 nC g(on) Q I = 10A, V = 15V, V = 0.5 V 6 nC ge C GE CE CES A1 b c b2 Q 22 nC b4 gc 1 - Gate e 2,4 - Collector J M C A M t 14 ns 3 - Emitter d(on) Inductive load, T = 25C J t 17 ns ri = 10A, V = 15V I C GE E 1.4 mJ on V = 0.5 V , R = 10 t CE CES G 130 ns d(off) Note 2 t 70 ns fi E 0.7 mJ off t 15 ns d(on) Inductive load, T = 150C J t 6 ns ri I = 10A, V = 15V E C GE 2.3 mJ on V = 0.5 V , R = 10 CE CES G t 166 ns d(off) Note 2 t 94 ns fi E 0.9 mJ off R 0.53 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.0 V F I = 10A,V = 0V, Note 1 F GE T = 150C 2.4 V J I 18 A RM I = 10A,V = 0V, -di /dt = 400A/ s, F GE F V = 1200V, T = 150C t 160 ns R J rr R 0.70 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537