Product Information

IXGX100N170

Name: IXGX100N170
Brand: IXYS
SKU: IXGX100N170_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXGX100N170 electronic component of IXYS

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Datasheet

IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A

Manufacturer: IXYS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 33.3025 ea
Line Total: USD 33.3

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 30 Multiples : 30 IXGX100N170 IXYS	30 : USD 80.7535

0 - WHS 2 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 IXGX100N170 IXYS	1 : USD 45.077

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Additional Infomation About Product

The IXGX100N170 is a Dual N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS. This component is capable of handling up to 100A of continuous drain current and can be used in a variety of switching and power management applications. It has an RDS(ON) (drain-source on resistance) of 0.00170 Ohms and a breakdown voltage of 17V. Other features include low on-state resistance, low gate-charge, and ESD protection. The IXGX100N170 is also RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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Manufacturer IXYS IXYS
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.7 kV 1.7 kV
Collector-Emitter Saturation Voltage 2.5 V 2.5 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 170 A 170 A
Gate-Emitter Leakage Current 200 nA 200 nA
Package / Case PLUS 247 - 3 PLUS 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 830 W 830 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Ixgx100n170 Ixgx100n170
Continuous Collector Current Ic Max 600 A 600 A
Height 21.34 mm 21.34 mm
Length 16.13 mm 16.13 mm
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Width 5.21 mm 5.21 mm
Brand Ixys Ixys
Continuous Collector Current 170 A 170 A
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 30 30
Subcategory Igbts Igbts