Product Information

IXGH60N60C3D1

IXGH60N60C3D1 electronic component of IXYS

Datasheet
IGBT Modules 60 Amps 600V

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.818 ea
Line Total: USD 12.82

291 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
274 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 11.869
2 : USD 8.515
3 : USD 8.502
6 : USD 8.047

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Height
Length
Series
Width
Brand
Mounting Style
Cnhts
Hts Code
Maximum Gate Emitter Voltage
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
LoadingGif

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The IXGH60N60C3D1 is an insulated gate bipolar transistor (IGBT) from IXYS. It is a high power transistor with a breakdown voltage of 600 V and a maximum collector current rating of 60 A. This device is optimized for driving both inductive and resistive loads, making it suitable for power control applications. It has an isolated package for superior thermal and attractive dissipation performance. Additionally, the IXGH60N60C3D1 features a fast switching speed and a low saturation voltage, making it suitable for high-frequency and high-current applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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