TM
V I R
DSS D25 DS(on)
HiPerFET Power MOSFETs
TM
IXFR 50N50 500 V 43 A 100 m
ISOPLUS247
IXFR 55N50 500 V 48 A 90 m
(Electrically Isolated Back Surface)
t 250 ns
rr
Single Die MOSFET
TM
Symbol Test Conditions Maximum Ratings ISOPLUS 247
V T = 25C to 150C 500 V
DSS J
V T = 25C to 150C; R = 1 M 500 V
DGR J GS
G
V Continuous 20 V
GS
D
V Transient 30 V
GSM Isolated back surface*
I T = 25C 50N50 43 A
D25 C
55N50 48 A
G = Gate D = Drain
I T = 25C, Pulse width limited by T 50N50 200 A
DM C JM
S = Source
55N50 220 A
I T = 25C 50N50 50 A
AR C
* Patent pending
55N50 55 A
E T = 25C60mJ
AR C
Features
E T = 25C3J
AS C
Silicon chip on Direct-Copper-Bond
dv/dt I I , di/dt 100 A/ s, V V 5 V/ns
S DM DD DSS
substrate
T 150C, R = 2
J G
- High power dissipation
- Isolated mounting surface
P T = 25C 400 W
D C
- 2500V electrical isolation
T -40 ... +150 C
Low drain to tab capacitance(<50pF)
J
T 150 C TM
JM Low R HDMOS process
DS (on)
T -40 ... +150 C
stg
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
T 1.6 mm (0.063 in.) from case for 10 s 300 C
L
rated
V 50/60 Hz, RMS t = 1 min 2500 V~ Fast intrinsic Rectifier
ISOL
Weight 5 g
Applications
DC-DC converters
Symbol Test Conditions Characteristic Values
Battery chargers
(T = 25C, unless otherwise specified)
J
Switched-mode and resonant-mode
min. typ. max.
power supplies
V V = 0 V, I = 1mA 500 V DC choppers
DSS GS D
AC motor control
V V = V , I = 8mA 2.5 4.5 V
GS(th) DS GS D
Advantages
I V = 20 V, V = 0 200 nA
GSS GS DS
Easy assembly
I V = V T = 25C 25 A
DSS DS DSS J
Space savings
V = 0 V T = 125C2 mA
GS J
High power density
R V = 10 V, I = I 50N50 100 m
DS(on) GS D T
Note 1 55N50 90 m
98588B (04/02)
2002 IXYS All rights reservedIXFR 50N50
IXFR 55N50
Symbol Test Conditions Characteristic Values
ISOPLUS 247 OUTLINE
(T = 25C, unless otherwise specified)
J
min. typ. max.
g V = 10 V; I = I Note 1 45 S
fs DS D T
C 9400 pF
iss
C V = 0 V, V = 25 V, f = 1 MHz 1280 pF
oss GS DS
C 460 pF
rss
t 45 ns
d(on)
t V = 10 V, V = 0.5 V , I = I 60 ns
r GS DS DSS D T
t R = 1 (External), 120 ns
d(off) G
t 45 ns
f
Q 330 nC
g(on)
Q V = 10 V, V = 0.5 V , I = I 55 nC
gs GS DS DSS D T
Q 155 nC
gd
R 0.30 K/W
thJC
R 0.15 K/W
thCK
Source-Drain Diode Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
I V = 0 V 55N50 55 A
S GS
50N50 50 A
I Repetitive; 55N50 220 A
SM
pulse width limited by T 50N50 200 A
JM
V I = I , V = 0 V 1.5 V
SD F S GS
t 250 ns
rr
I = 25A,-di/dt = 100 A/ s, V = 100 V
F R
Q 1.0 C
RM
See IXFK55N50 data sheet for
characteristic curves.
I 10 A
RM
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
2. I test current: 50N50 I = 25A
T T
55N50 I = 27.5A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025