FDM47-06KC5

FMD 47-06KC5 Advanced Technical Information FDM 47-06KC5 1) I = 47 A D25 CoolMOS Pow er MOSFET V = 600 V DSS with HiPerDyn FRED R = 0.045 DS(on) max Buck and Boost Topologies 3 3 ISOPLUS i4 Electrically isolated back surface T 2500 V electrical isolation 5 D N-Channel Enhancement Mode 1 4 4 Low R , high V MOSFET q DSon DSS isolated back E72873 5 Ultra low gate charge surface 1 D 2 T 2 FMD FDM Features MOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate V T = 25C 600 V DSS VJ - high power dissipation - isolated mounting surface V 20 V GS - 2500 V electrical isolation I T = 25C 47 A D25 C - low drain to tab capacitance (< 40 pF) I T = 90C 32 A 1) th D90 C Fast CoolMOS power MOSFET 4 generation E single pulse 1950 mJ AS I = 11 A T = 25C D C - high blocking capability E repetitive 3 mJ AR - lowest resistance dV/dt MOSFET dV/dt ruggedness V = 0...480 V 50 V/ns DS - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance Symbol Conditions Characteristic Values due to reduced chip thickness Enhanced total power density (T = 25C, unless otherwise speci ed) VJ HiPerDyn FRED min. typ. max. - consisting of series connected diodes - enhanced dynamic behaviour for R V = 10 V I = 44 A 40 45 m DSon GS D high frequency operation V V = V I = 3 mA 2.5 3 3.5 V GS(th) DS GS D Applications I V = V V = 0 V T = 25C 10 A DSS DS DSS GS VJ T = 125C 50 A VJ Switched mode power supplies (SMPS) I V = 20 V V = 0 V 100 nA GSS GS DS Uninterruptible power supplies (UPS) C V = 0 V V = 100 V 6800 pF iss GS DS Power factor correction (PFC) C f = 1 MHz 320 pF oss Advantages Q 150 190 nC g Q V = 0 to 10 V V = 400 V I = 44 A 35 nC gs GS DS D Easy assembly: Q 50 nC gd no screws or isolation foils required Space savings t 30 ns d(on) High power density t 20 ns r t 100 ns High reliability d(off) V = 10 V V = 400 V GS DS t 10 ns f I = 44 A R = 3.3 D G E tbd mJ on E tbd mJ off E tbd mJ rec off 1) R 0.45 K/W thJC CoolMOS is a trademark of R with heat transfer paste 0.25 K/W In neon Technologies AG. thCH IXYS reserves the right to change limits, test conditions and dimensions. 20090209a 2009 IXYS All rights reserved 1 - 3FMD 47-06KC5 Advanced Technical Information FDM 47-06KC5 MOSFET T Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) VJ min. typ. max. I V = 0 V 44 A S GS V I = 44 A V = 0 V 0.9 1.2 V SD F GS t 600 ns rr Q I = 44 A -di /dt = 100 A/s V = 400 V 17 C RM F F R I 60 A RM Diode D (data for series connection) Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 95 A F25 C I T = 90C 56 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 30 A T = 25C 2.48 V F F VJ I = 60 A 3.02 V F I = 30 A T = 150C 1.89 A F VJ I = 60 A 2.45 A F I V = V T = 25C 1 A R R RRM VJ T = 150C 0.2 mA VJ I 450 A FSM t = 10 ms (50 Hz), sine T = 45C VJ I I = 30 A V = 100 V T = 25C 2 A RM F R VJ t -di /dt = 200 A/s 30 ns rr F R 0.55 K/W thJC R with heat transfer paste 0.25 K/W thCH Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T storage -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. max. coupling capacity between shorted pins 40 C pF P and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight g 9 IXYS reserves the right to change limits, test conditions and dimensions. 20090209a 2009 IXYS All rights reserved 2 - 3