Datenblatt / Data sheet N Netz-Thyristor T930N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 3200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 3400 V repetitive peak forward off-state and reverse voltages 3600 V Elektrische Eigenschaften 3200 V Vorwrts-Stossspitzensperrspannung T = -40C... T V vj vj max DSM 3400 V non-repetitive peak forward off-state voltage 3600 V 3300 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 3500 V non-repetitive peak reverse voltage 3700 V 2200 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 930 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 1340 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 2110 A Durchlastrom-Effektivwert I TRMS RMS on-state current 19500 A Stossstrom-Grenzwert T = 25 C C, t = 10 ms I vj P TSM 17500 A T = T , t = 10 ms surge current vj vj max P 1900 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 1530 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 80 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 2,70 V Durchlassspannung T = T , i = 3600 A v vj vj max T T max. 1,48 V on-state voltage T = T , i = 1000 A vj vj max T 1,00V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,43 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 200 A i 4700 A T = T A= 1,166E+00 T vj vj max on-state characteristic B= 3,485E-04 C= -7,225E-02 v = A + B i + C ln(i + 1) + D i T T T T D= 1,453E-02 Zndstrom T = 25 C, v = 12V I max. 250mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2,2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 500mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 2500mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, GM G t = 20 s g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 250mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 4,5s gd gate controlled delay time T = 25 C, i = 1 A, vj GM di /dt = 1 A/s G prepared by: H.Sandmann date of publication: 2009-03-04 approved by: M.Leifeld revision: 1.0 IFBIP D AEC / 2009-03-04 / H.Sandmann A 05/09 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T930N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t typ. 500s vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand Khlflche / cooling surface R thJC beidseitig / two-sided, = 180sin max. 0,0215 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,0195 C/W Anode / anode, = 180sin max. 0,0406 C/W Anode / anode, DC max. 0,0384 C/W Kathode / cathode, = 180sin max. 0,0424 C/W Kathode / cathode, DC max. 0,0400 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,0035 C/W thermal resistance, case to heatsink max. 0,0070 einseitig / single-sides C/W 125C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 20...45kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 540g weight Kriechstrecke 20mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2009-03-04 / H.Sandmann A 05/09 Seite/page 2/10