S402TSRP

Thyristors Datasheet Sx02xSx EV Series EV Series 1.5 Amp Sensitive SCRs RoHS Description This new 1.5A sensitive gate SCR component series offers high static dv/dt and low turn-off time (tq) All SCR junctions are glass- passivated to ensure long term reliability and parametric stability. Features Surge Sensitive gate for direct capability > 15Amps microprocessor interface Blocking voltage Thru hole and surface mount (VDRM/ VRRM) packages capability up to 600V RoHS compliant and Halogen- High dv/dt noise immunity Free Improved turn-off time (tq) < 35 sec. Additional Information Applications The Sx02xSx EV series is specifically designed for solenoid drive often seen in GFCI and similar safety cut-off devices. Resources Accessories Samples Main Features Schematic Symbol A Symbol Value Unit I 1.5 A T(RMS) V /V 400 or 600 V DRM RRM I 200 A GT G K Absolute Maximum Ratings Symbol Parameter Value Unit TO-92 T = 65C C RMS on-state current I SOT-89 T = 80C 1.5 A T(RMS) C (full sine wave) SOT-223 T = 95C C TO-92 T = 65C C I Average on-state current SOT-89 T = 80C 0.95 A T(AV) C SOT-223 T = 95C C TO-92 F = 50 Hz 12.5 Non repetitive surge peak on-state current I SOT-89 A TSM (Single cycle, T initial = 25C) F = 60 Hz 15.0 J SOT-223 t = 10 ms F = 50 Hz 0.78 p 2 2 2 I t I t Value for fusing A s t = 8.3 ms F = 60 Hz 0.93 p TO-92 di/dt Critical rate of rise of on-state current IG = 10mA SOT-89 T = 125C 50 A/s J SOT-223 I Peak gate current t = 10 s T = 125C 1.0 A GM p J P Average gate power dissipation T = 125C 0.1 W G(AV) J T Storage junction temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 03/19/21Thyristors Datasheet Sx02xSx EV Series EV Series 1.5 Amp Sensitive SCRs Electrical Characteristics (TJ = 25C, unless otherwise specified) Sx02xS Sx02xS1 Sx02xS2 Symbol Description Test Conditions Units Min Max Min Max Min Max I DC Gate Trigger Current V = 12V R = 60 15 200 15 100 15 50 A GT D L V DC Gate Trigger Voltage V = 12V R = 60 0.8 0.8 0.8 V GT D L V Peak Reverse Gate Voltage I = 10A 5 5 5 V GRM RG I Holding Current R = 1 k 5 3 3 mA H GKT = 125C J (dv/Critical Rate-of-Rise of V = V / V D DRM RRM 25 25 25 V/s dt)s Off-State Voltag Exponential Waveform R = 1 GKTJ = 125C 600 V t Turn-Off Time 35 35 35 s q R = 1 GKI = 10mA G t Turn-On Time PW = 15sec 3 3 3 s gt I = 3.0A (pk TV =V , T =125C, D DRM J V Gate Non-Trigger Voltage 0.2 0.2 0.2 V GD R =3.3 L x0 = voltage/10 Static Characteristics (TJ = 25C, unless otherwise specified) Value Symbol Description Test Conditions Unit Min Max V Peak On-State Voltage I = 3.0A (pk) 1.70 V TM TM T = 25C V = V J D DRM 5 A R = 1 k GK I Off-State Current, Peak Repetitive DRM T = 125C V = V J D DRM 500 A R = 1 k GK Thermal Resistances Symbol Parameter Value Unit TO-92 50 1 R Junction to case (AC) I = 1.5A SOT-89 35 C/W (J-C) T (RMS) SOT-223 25 TO-92 160 1 R Junction to ambient I = 1.5A SOT-89 90 C/W (J-A) T (RMS) SOT-223 60 1 60Hz AC resistive load condition, 100% conduction. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 03/19/21