/ Technical Information IGBT- FD800R33KF2C-K IGBT-modules IHM-A IHM-A module / Preliminary Data V = 3300V CES I = 800A / I = 1600A C nom CRM Typical Applications Chopper Applications Traction Drives Mechanical Features AlSiC AlSiC Base Plate for increased Thermal Cycling Capability Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SB date of publication: 2013-11-25 approved by: DTS revision: 2.3 UL approved (E83335) 1 / Technical Information IGBT- FD800R33KF2C-K IGBT-modules Preliminary Data IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values Tvj = 25C 3300 V V CES Collector-emitter voltage T = -25C 3300 vj T = 80C, T = 150C I 800 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 1300 A t = 1 ms I 1600 A P CRM Repetitive peak collector current T = 25C, T = 150C P 9,60 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 800 A, V = 15 V T = 25C 3,40 4,25 V C GE vj V CE sat Collector-emitter saturation voltage I = 800 A, V = 15 V T = 125C 4,30 5,00 V C GE vj IC = 80,0 mA, VCE = VGE, Tvj = 25C VGEth 4,2 5,1 6,0 V Gate threshold voltage V = -15 V ... +15 V, V = 1800V Q 15,0 C GE CE G Gate charge Tvj = 25C RGint 0,63 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 100 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 5,40 nF Reverse transfer capacitance - V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 800 A, VCE = 1800 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,28 s GE vj RGon = 1,4 , CGE = 150 nF () IC = 800 A, VCE = 1800 V Tvj = 25C 0,18 s t r Rise time, inductive load V = 15 V T = 125C 0,20 s GE vj RGon = 1,4 , CGE = 150 nF () IC = 800 A, VCE = 1800 V Tvj = 25C 1,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,70 s GE vj RGoff = 1,8 , CGE = 150 nF () IC = 800 A, VCE = 1800 V Tvj = 25C 0,20 s t f Fall time, inductive load V = 15 V T = 125C 0,20 s GE vj RGoff = 1,8 , CGE = 150 nF () IC = 800 A, VCE = 1800 V, LS = 40 nH Tvj = 25C 930 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 1450 mJ GE vj on RGon = 1,4 , CGE = 150 nF ( IC = 800 A, VCE = 1800 V, LS = 40 nH Tvj = 25C 870 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 1000 mJ GE vj off RGoff = 1,8 , CGE = 150 nF VGE 15 V, VCC = 2500 V I SC SC data V = V -L di/dt t 10 s, T = 125C 4000 A CEmax CES sCE P vj IGBT / per IGBT R 13,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 8,00 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: SB date of publication: 2013-11-25 approved by: DTS revision: 2.3 2