Product Information

HFGM200D12V3

HFGM200D12V3 electronic component of HUAJING

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Manufacturer: HUAJING
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 72.67 ea
Line Total: USD 72.67

2 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

HFGM200D12V3
HUAJING

1 : USD 79.092

Read More Specifications

     
Manufacturer
Product Category
Category
Max. Off-State Voltage
Collector Current
Pulsed Collector Current
Mechanical Mounting
Application
Type Of Module
Electrical Mounting
Semiconductor Structure
Topology
Gate-Emitter Voltage
Technology
Case
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Additional Infomation About Product

The HUAJING HFGM200D12V3 module is an Industrial Grade Insulated Gate Bipolar Transistor (IGBT) Half Bridge. This module is designed to handle high current load applications with maximum current capacity of 200 Amps. It is capable of switching power supply voltage up to 12V DC, supporting dc-dc converters, power inverters, UPS systems and motor drives. It features high efficiency and superior electrical performance and is designed with a strong heat-conductive metal base to ensure a reliable and robust operation. The IGBT technology ensures steady operation in wide temperature range and improved reliability due to its fast switching speed and low conduction loss.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAJING may also be referenced as

HUAJING
Wuxi China Resources Huajing Microelectronics

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