Product Information

GKR2616

GKR2616 electronic component of GeneSiC Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching Standard Recovery - 1600 V - 25 A - DO-4
Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

GKR2616
GeneSiC Semiconductor

1 : USD 9.1649
10 : USD 6.9161
25 : USD 6.3063
100 : USD 5.6895
250 : USD 5.292
500 : USD 5.0148
1000 : USD 4.7502
2500 : USD 4.7502
5000 : USD 4.5738
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

GKR26/04 thru GKR26/16 V = 400 V - 1600 V RRM Silicon Standard I =25 A F Recovery Diode Features High Surge Capability DO-4 Package Types up to 1600 V V RRM Equivalent to SKR26 Series 2 2 Not ESD Sensitive 1 1 GKR Maximum ratings, at T = 25 C, unless otherwise specified (GKN has leads reversed) j Parameter Symbol Conditions GKR26/04 GKR26/08 GKR26/12 GKR26/14 GKR26/16 Unit Repetitive peak reverse voltage V 400 800 1200 1400 1600 V RRM V 1200 1400 DC blocking voltage 400 800 1600 V DC T 100 C CContinuousontinuous forwforwardard ccurrenturrent II 2525 2525 2525 2525 2525 AA CC FF Surge non-repetitive forward I T = 25 C, t = 10 ms 375 375 375 375 375 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions GKR26/04 GKR26/08 GKR26/12 GKR26/14 GKR26/16 Unit V I = 60 A, T = 25 C 1.55 Diode forward voltage 1.55 1.55 1.55 1.55 V F F j Reverse current I V = V , T = 180 C 44 44 4 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 2.00 2.00 2.00 2.00 2.00 K/W thJC case 1 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/GKR26/04 thru GKR26/16 Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp Fig 3: Transient Thermal Impedence vs Time Fig 4: Power Dissipation vs Forward Current 2 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Genesic Semiconductor may also be referenced as

GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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