Product Information

G3R20MT12N

G3R20MT12N electronic component of GeneSiC Semiconductor

Datasheet
N-Channel 1200V 105A (Tc) 365W (Tc) Chassis Mount SOT-227

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 59.1675 ea
Line Total: USD 59.17

728 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
728 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

G3R20MT12N
GeneSiC Semiconductor

1 : USD 59.1675
10 : USD 54.9125
30 : USD 54.9125
100 : USD 54.05
250 : USD 52.854
500 : USD 51.8305
1000 : USD 51.819
5000 : USD 51.8075

156 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

G3R20MT12N
GeneSiC Semiconductor

1 : USD 62.868
3 : USD 61.997
10 : USD 60.45

     
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Drive Voltage Max Rds On Min Rds On
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif

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The GeneSiC Semiconductor G3R20MT12N is an N-Channel 1200V 105A (Tc) 365W (Tc) Chassis Mount SOT-227 electronic part. It is designed for use in industrial and telecom applications that require high power capacity. The part features a nominal voltage of 1200V and a maximum current rating of 105A. The product is made in a SOT-227 package with a chassis mount for easy installation. The product is halogen-free and has a maximum dissipation power of 365 watts (Tc). It also has an optimized gate charge for faster switching speeds. The part features fast switching, low losses, and good thermal performance. It is RoHS compliant and falls under the ISO9001:2008 guidelines.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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