Product Information

GKR13012

GKR13012 electronic component of GeneSiC Semiconductor

Datasheet
Rectifiers 165V 1200A DO-8 Silicon Standard Recovery Stud Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

60: USD 38.7638 ea
Line Total: USD 2325.83

0 - Global Stock
MOQ: 60  Multiples: 60
Pack Size: 60
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 60
Multiples : 60

Stock Image

GKR13012
GeneSiC Semiconductor

60 : USD 37.927
100 : USD 36.593
250 : USD 34.155
500 : USD 34.1205
1000 : USD 32.798

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Packaging
Frequency Range
Product
Brand
Maximum Diode Capacitance
Operating Temperature Range
Maximum Power Dissipation
Factory Pack Quantity :
Switch Configuration
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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GKR130/04 thru GKR130/18 V = 400 V - 1800 V RRM Silicon Standard I =165 A F Recovery Diode Features High Surge Capability DO-8 Package Types up to 1800 V V RRM Equivalent to SKR130 Series Not ESD Sensitive 2 1 2 1 GKR Maximum ratings, at T = 25 C, unless otherwise specified (GKN has leads reversed) j Parameter Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit Repppetitive peak reverse voltagge V 400 800 1200 1400 1600 1800 V RRM V 1200 1400 DC blocking voltage 400 800 1600 1800 V DC T 100 C I 165 165 165 165 165 165 A Continuous forward current C F Surge non-repetitive forward I T = 25 C, t = 10 ms 2500 2500 2500 2500 2500 2500 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions GKR130/04 GKR130/08 GKR130/12 GKR130/14 GKR130/16GKR130/18Unit V I = 60 A, T = 25 C 1.5 1.5 Diode forward voltage 1.5 1.5 1.5 1.5 V F F j Reverse current I V = V , T = 180 C 22 22 22 22 22 22 mA R R RRM j Thermal characteristics Thermal resistance, junction - R 0.35 0.35 0.35 0.35 0.35 0.35 K/W thJC case 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/GKR130/04 thru GKR130/18 Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp Fig 3: Transient Thermal Impedence vs Time Fig 4: Power Dissipation vs Forward Current 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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